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Super Fast Recovery Diodes
5N120BND
Current | 15 A |
Usage/Application | Industrial |
Mounting Type | Through Hole |
Part Number | 5N120BND |
Pin Count | 3 |
Channel Type | N |
Country of Origin | Made in India |
5N120BND TO247 And TO220
The 5N120 series refers to Insulated Gate Bipolar Transistors (IGBTs) designed for high-voltage switching applications. These devices combine the high input impedance of MOSFETs with the low on-state conduction losses of bipolar transistors, making them suitable for applications such as AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.
Key Specifications:
Collector-Emitter Voltage (V<sub>CE</sub>): 1200V
Continuous Collector Current (I<sub>C</sub>): 5A
Saturation Voltage (V<sub>CE(sat)</sub>): Typically 2.0V at I<sub>C</sub> = 25A
Package Type: TO-247
These IGBTs are characterized by their Non-Punch Through (NPT) design, which enhances their performance in high-voltage applications. The inclusion of an anti-parallel hyperfast diode improves their switching characteristics, making them efficient for various power electronics applications.
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RHRG75120 Diode TO247-2 75A 1200V
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