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IGBT Transistor
GT40J121 Igbt Transistor
Product Brochure
| Current | 15 A |
| Brand | Toshiba |
| Part Number | GT40J121 |
| Mounting Type | Throw Hole |
| Pin Count | 3 |
| Channel Type | N |
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IXTQ82N25P
| Voltage | 100 V |
| Mounting Type | TO-247 |
| Part Number | IXTQ82N25P |
| Country of Origin | Made in India |
IXTQ82N25P TO247
The IXTQ82N25P is an Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications, such as motor control, power supplies, and industrial inverters. Here are its key specifications:
Key Features & Specifications:
Type: N-Channel IGBT
Collector-Emitter Voltage (Vce): 250V
Continuous Collector Current (Ic): 82A
Pulsed Collector Current (Icm): 328A
Gate-Emitter Voltage (Vge): ±20V
On-State Voltage (Vce(on)): Typically 2.2V @ 82A
Total Power Dissipation (Ptot): 560W
Switching Frequency: Optimized for high-speed switching applications
Package Type: TO-247
Applications: Motor drives, inverters, power converters, UPS systems
Key Advantages:
✔ High current handling capability
✔ Low saturation voltage for efficiency
✔ Fast switching performance.
5N50 TO-220 mosfet transistor
| Mounting Type | Throw Hole |
| Part Number | JCS5N50FR 5F50H2F |
| Pin Count | 3 |
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JCS5N50FR 5F50H2F TO-220
G4PC50UD
| Current | 1.5 A |
| Part Number | G4PC50UD |
| Mounting Type | TO-247 |
| Pin Count | 3 |
| Country of Origin | Made in India |
K25T1202
| Current | 1.5 A |
| Part Number | K25T1202 |
| Mounting Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Country of Origin | Made in India |
K25T1202 TO-247 Original
The K25T1202 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current switching applications. It is optimized for low conduction losses and high-speed switching, making it suitable for inverters, motor drives, and power supply circuits.
Features & Specifications:
✔ Collector-Emitter Voltage (Vce): 1200V
✔ Continuous Collector Current (Ic): 25A
✔ Low Saturation Voltage (Vce(sat)): Reduces power losses
✔ High-Speed Switching Performance for efficient energy conversion
✔ Package: TO-247 for excellent thermal dissipation
✔ Short Circuit Withstand Capability for reliability
Applications:
Motor Control & Inverter Circuits
Uninterruptible Power Supplies (UPS)
Renewable Energy Systems (Solar & Wind Inverters)
Switching Power Supplies (SMPS)
G4PC50W
| Current | 40 A |
| Part Number | G4PC50W |
| Channel Type | N Type |
| Usage | Motor Drives & Industrial Inverters |
| Package Type | TO-247 |
| Collector-Emitter Voltage (Vce) | 600V |
G4PC50W TO-247 Original
The G4PC50W is a high-speed N-Channel IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications, such as inverters, motor control, power supplies, and industrial automation. It offers a low saturation voltage, high current capability, and fast switching speed for efficient energy conversion.
1. General Specifications:
🔹 Type: N-Channel IGBT
🔹 Collector-Emitter Voltage (Vce): 600V
🔹 Continuous Collector Current (Ic): 50A @ 25°C
🔹 Pulsed Collector Current (Icm): 100A
🔹 Gate-Emitter Voltage (Vge): ±20V
🔹 Collector-Emitter Saturation Voltage (Vce(sat)): 1.8V (Max) @ 50A
🔹 Turn-On Time (Ton): 60ns
🔹 Turn-Off Time (Toff): 200ns
🔹 Power Dissipation (Pd): 250W
🔹 Operating Temperature Range: -55°C to +150°C
🔹 Package Type: TO-247
2. Features:
✅ High Voltage & Current Capability (600V / 50A)
✅ Low Saturation Voltage (Vce(sat)) for Energy Efficiency
✅ Fast Switching Speed – Reduces Switching Losses
✅ High Surge Current Capability (100A Pulsed)
✅ Rugged & Reliable Design for Industrial Use
3. Applications:
✔️ Motor Drives & Industrial Inverters
✔️ Switch Mode Power Supplies (SMPS)
✔️ Uninterruptible Power Supplies (UPS)
✔️ Welding Equipment
✔️ HVAC & Power Conversion Systems
4. Equivalent & Alternative IGBTs:
If G4PC50W is unavailable, consider:
🔹 IRG4PC50W – 600V, 50A
🔹 HGTG50N60A4D – 600V, 50A
🔹 IXGH50N60C3 – 600V, 50A
26NM60N
| Channel Type | P Channel |
| Mounting Type | TO-247 |
| Part Number | 26NM60N |
| Country of Origin | Made in India |
24NM60N TO-247 Original
The 26NM60N is an N-channel Power MOSFET designed for high-efficiency switching applications, particularly in power supplies, motor drivers, and industrial electronics. It is known for its low on-resistance (Rds(on)), high voltage handling, and efficient thermal performance.
Key Specifications:
Drain-Source Voltage (Vds): 600V
Continuous Drain Current (Id): 26A (at 25°C)
Drain-Source Resistance (Rds(on)): ~0.145Ω (typ.)
Gate-Source Voltage (Vgs): ±30V
Total Power Dissipation (Pd): High power dissipation capability
Package Type: TO-247 (for effective heat dissipation)
Features:
High voltage rating (600V) for industrial and power applications
Low Rds(on) for minimal conduction losses
Fast switching capability for high-frequency circuits
Robust design with high current handling
Efficient thermal dissipation in TO-247 package
Applications:
Switch-mode power supplies (SMPS)
Motor control circuits
UPS (Uninterruptible Power Supply) systems
High-voltage inverters and converters
Industrial power applications
IRFP22N60K
| Channel Type | N Channel |
| Part Number | IRFP22N60K |
| Maximum Operating Temperature | -40 DegreeC to 150 DegreeC |
| Current Limit | 1.7A (Typical) |
| Efficiency | Up to 80% |
| Switching Frequency | 132 kHz (Fixed) |
Power MOSFET transistors are semiconductor devices designed for switching and amplifying electrical signals in high-power applications. They are widely used in power supplies, motor control, RF amplification, and inverters due to their high efficiency and fast switching capabilities.
Types of Power MOSFETs
N-Channel MOSFETs – Most commonly used due to their lower ON resistance and higher efficiency.
P-Channel MOSFETs – Used in specific applications where N-channel MOSFETs are not suitable, but have higher resistance.
Enhancement Mode MOSFETs – Default OFF state; require a gate voltage to turn ON.
Depletion Mode MOSFETs – Default ON state; require a gate voltage to turn OFF.
Popular Power MOSFET Models 1. IRF540N (N-Channel)
Voltage: 100V
Current: 33A
Resistance: 44mΩ
Common for DC-DC converters and motor controllers.
2. IRFZ44N (N-Channel)
Voltage: 55V
Current: 49A
Low Rds(ON), making it ideal for automotive applications.
3. IRF3205 (N-Channel)
Voltage: 55V
Current: 110A
High current rating, used in power inverters.
4. STP55NF06 (N-Channel)
Voltage: 60V
Current: 55A
Low gate drive requirements.
5. FQP30N06L (N-Channel, Logic Level)
Voltage: 60V
Current: 32A
Works well with logic-level circuits (e.g., Arduino).
RF Power MOSFETs
If you're looking for high-frequency RF MOSFETs, consider:
MRF150 (500W, 50V)
BLF188XR (1400W, 50V)
MRF101AN (100W, 50V)
MRF300AN (300W, 65V)
Key Parameters to Consider
Drain-Source Voltage (Vds) – Maximum voltage the MOSFET can handle.
Drain Current (Id) – Maximum current capacity.
Rds(ON) (ON Resistance) – Lower values indicate better efficiency.
Gate-Source Voltage (Vgs) – Determines compatibility with logic-level signals.
Power Dissipation – Defines the heat management requirements.
47N60C3 IGBT Transistor
Product Brochure
| Channel Type | N Channel |
| Brand | Infineon |
| Part Number | 47N60C3 |
| Maximum Gate Source Voltage | 600V |
| Maximum Continuous Drain Current | 47A |
| Mounting Type | TO247 |
| Pin Count | 3 |
47N60C3 TO-247 Original Infineon
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K75T60 IGBT Transistor
Product Brochure
| Brand | Infineon |
| Part Number | K75T60 |
| Mounting Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
K75T60 TO-247 Infineon Orignle IGBT Transistor
IXFB70N60
| Part Number | IXFB70N60 |
| Mounting Type | Throw Hole |
| Pin Count | 3 |
| Country of Origin | Made in India |
IXFB7060 TO274
The IXFB70N60 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. With a 600V collector-emitter voltage (Vce) and 70A continuous collector current (Ic), it is well-suited for motor drives, power inverters, and industrial automation systems.
Features & Specifications:
✔ Collector-Emitter Voltage (Vce): 600V
✔ Continuous Collector Current (Ic): 70A
✔ Low Vce(sat): Reduces conduction losses for improved efficiency
✔ Fast Switching Speed: Optimized for high-frequency applications
✔ High Energy Handling Capability
✔ Package: TO-247 for effective thermal dissipation
✔ Applications:
Motor control and industrial drives
Uninterruptible Power Supplies (UPS)
High-voltage DC-DC converters
30N120FD
| Part Number | 30N120FD |
| Mounting Type | TO-247 |
| Pin Count | 3 |
| Country of Origin | Made in India |
30N120 TO247 ORIGINAL
The 30N120FD is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications, offering high efficiency and fast switching performance. It has a 1200V collector-emitter voltage (Vce) and a 30A continuous collector current (Ic), making it suitable for industrial inverters, motor drives, and power conversion systems.
Features & Specifications:
✔ Collector-Emitter Voltage (Vce): 1200V
✔ Continuous Collector Current (Ic): 30A
✔ Low Saturation Voltage (Vce(sat)): Reduces conduction losses
✔ Fast Switching Speed: Optimized for high-frequency applications
✔ Package: TO-247 for improved thermal performance
✔ Applications:
Motor control and industrial drives
Inverters and UPS systems
High-voltage power converters
Renewable energy systems (solar inverters)
40tps 12a mosfet thyristor
Product Brochure
| Number of Pins | 3 |
| Brand | Vishay High Power Products |
| Part Number | 40TPS...A/40TPS |
| Mounting Type | SMD |
| Package Type | Box |
| Maximum Operating Temperature | - 40 to 125 |
| Rated Average On-State Current | 1000 |
| Country of Origin | Made in India |
It appears there might be some confusion regarding the 40TPS12A component. The 40TPS12A is a silicon-controlled rectifier (SCR), not an RF MOSFET. SCRs are semiconductor devices used for controlling power in AC/DC systems, commonly found in applications like motor controls, heating systems, and power switching.
Key Specifications of the 40TPS12A SCR:
Voltage Rating: 1200V
Current Rating: 35A (average on-state current)
Package Type: TO-247AC
G4PC40UD
| Current | 1.5 A |
| Part Number | G4PC40UD |
| Channel Type | N-Channel IGBT |
| Gate-Emitter Voltage (Vge) | +-20V |
| Operating Temperature Range | -55 DegreeC to +150 DegreeC |
| Package Type | TO-247 |
G4PC40UD TO-247 ORIGINAL
The G4PC40UD is an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications, such as inverters, motor drives, and power supplies. It combines low conduction losses and fast switching performance, making it ideal for energy-efficient power circuits.
1. General Specifications:
🔹 Type: N-Channel IGBT
🔹 Collector-Emitter Voltage (Vce): 600V
🔹 Continuous Collector Current (Ic): 40A @ 25°C
🔹 Pulsed Collector Current (Icm): 80A
🔹 Gate-Emitter Voltage (Vge): ±20V
🔹 Collector-Emitter Saturation Voltage (Vce(sat)): 1.9V (Max) @ 40A
🔹 Switching Frequency: High-Speed Switching
🔹 Turn-On Time (Ton): 60ns
🔹 Turn-Off Time (Toff): 200ns
🔹 Power Dissipation (Pd): 190W
🔹 Operating Temperature Range: -55°C to +150°C
🔹 Package Type: TO-247
2. Features:
✅ Low Saturation Voltage (Vce(sat)) – Reduces conduction losses
✅ Fast Switching Performance – Suitable for high-frequency circuits
✅ High Current Handling (40A Continuous, 80A Pulsed)
✅ Robust & Durable Design – Withstands voltage and current surges
✅ TO-247 Package – Ideal for industrial and power applications
3. Applications:
✔️ Motor Control & Inverter Circuits
✔️ High-Frequency Power Supplies (SMPS)
✔️ Uninterruptible Power Supplies (UPS)
✔️ Welding Equipment
✔️ Power Conversion & Industrial Automation
4. Equivalent & Alternative IGBTs:
If G4PC40UD is unavailable, consider:
🔹 IRG4PC50UD – 600V, 50A
🔹 HGTG40N60A4D – 600V, 40A
🔹 IXGH40N60B3 – 600V, 40A
NJW0302G NJE0281G
Product Brochure
| Current | 1 A |
| Transistor Polarity | NPN |
| Brand | ON |
| Mounting Type | SMD |
| Part Number | NJW0302G NJW0281G |
| Country of Origin | Made in India |
NJW0302G NJW0281G ORIGINAL TO-247ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
10NM60 TO-220 Resistors
Product Brochure
| Resistance | 100 Ohm |
| Power Rating | 1/8W |
| Usage/Application | Electrical Industry |
| Mounting type | SMD |
| Shape | U Shape |
10NM60 TO-220 ORIGINAL ST PLASTIC BODYARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
ST55NM60ND
| Channel Type | N Channel |
| Mounting Type | Throw Hole |
| Part Number | ST55NM60ND |
| Country of Origin | Made in India |
ST55NM60ND TO247
The ST55NM60ND is an N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. It features a 600V voltage rating and 55A current capacity, making it ideal for motor drives, inverters, UPS systems, and switching power supplies. With low collector-emitter saturation voltage (Vce(sat)), it ensures minimal conduction losses, improving overall efficiency. The transistor is optimized for high-speed switching, reducing energy loss during operation. Built with advanced trench gate field-stop technology, it offers superior thermal stability and ruggedness. The ST55NM60ND comes in a TO-247 package, providing excellent heat dissipation for demanding industrial and power electronics applications.