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IGBT Transistor

IGBT Transistor

GT40J121 Igbt Transistor

GT40J121 Igbt Transistor
  • GT40J121 Igbt Transistor
  • GT40J121 Igbt Transistor
  • GT40J121 Igbt Transistor
  • GT40J121 Igbt Transistor
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Product Details:
Current15 A
BrandToshiba
Part NumberGT40J121
Mounting TypeThrow Hole
Pin Count3
Channel TypeN
GT40J121 Igbt Transistor 

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IXTQ82N25P

IXTQ82N25P
  • IXTQ82N25P
  • IXTQ82N25P
  • IXTQ82N25P
  • IXTQ82N25P
  • IXTQ82N25P
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Product Price: Rs 55 / PieceGet Best Price

Product Details:
Voltage100 V
Mounting TypeTO-247
Part NumberIXTQ82N25P
Country of OriginMade in India

IXTQ82N25P TO247

The IXTQ82N25P is an Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications, such as motor control, power supplies, and industrial inverters. Here are its key specifications:
Key Features & Specifications:

Type: N-Channel IGBT

Collector-Emitter Voltage (Vce): 250V

Continuous Collector Current (Ic): 82A

Pulsed Collector Current (Icm): 328A

Gate-Emitter Voltage (Vge): ±20V

On-State Voltage (Vce(on)): Typically 2.2V @ 82A

Total Power Dissipation (Ptot): 560W

Switching Frequency: Optimized for high-speed switching applications

Package Type: TO-247

Applications: Motor drives, inverters, power converters, UPS systems

Key Advantages:
 
High current handling capability
Low saturation voltage for efficiency
Fast switching performance.

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5N50 TO-220 mosfet transistor

5N50 TO-220 mosfet transistor
  • 5N50 TO-220 mosfet transistor
  • 5N50 TO-220 mosfet transistor
  • 5N50 TO-220 mosfet transistor
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Product Price: Rs 7 / PieceGet Best Price

Product Details:
Mounting TypeThrow Hole
Part NumberJCS5N50FR 5F50H2F
Pin Count3

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JCS5N50FR 5F50H2F TO-220

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G4PC50UD

G4PC50UD
  • G4PC50UD
  • G4PC50UD
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Product Price: Rs 60 / PieceGet Best Price

Product Details:
Current1.5 A
Part NumberG4PC50UD
Mounting TypeTO-247
Pin Count3
Country of OriginMade in India
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K25T1202

K25T1202
  • K25T1202
  • K25T1202
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Product Details:
Current1.5 A
Part NumberK25T1202
Mounting TypeTO-247
Pin Count3
Channel TypeN
Country of OriginMade in India

K25T1202 TO-247 Original

The K25T1202 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current switching applications. It is optimized for low conduction losses and high-speed switching, making it suitable for inverters, motor drives, and power supply circuits.
Features & Specifications:
Collector-Emitter Voltage (Vce): 1200V
Continuous Collector Current (Ic): 25A
Low Saturation Voltage (Vce(sat)): Reduces power losses
High-Speed Switching Performance for efficient energy conversion
Package: TO-247 for excellent thermal dissipation
Short Circuit Withstand Capability for reliability
Applications:

Motor Control & Inverter Circuits

Uninterruptible Power Supplies (UPS)

Renewable Energy Systems (Solar & Wind Inverters)

Switching Power Supplies (SMPS)

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G4PC50W

G4PC50W
  • G4PC50W
  • G4PC50W
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Product Details:
Current40 A
Part NumberG4PC50W
Channel TypeN Type
UsageMotor Drives & Industrial Inverters
Package TypeTO-247
Collector-Emitter Voltage (Vce)600V

G4PC50W TO-247 Original
The G4PC50W is a high-speed N-Channel IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications, such as inverters, motor control, power supplies, and industrial automation. It offers a low saturation voltage, high current capability, and fast switching speed for efficient energy conversion.
1. General Specifications:
🔹 Type: N-Channel IGBT
🔹 Collector-Emitter Voltage (Vce): 600V
🔹 Continuous Collector Current (Ic): 50A @ 25°C
🔹 Pulsed Collector Current (Icm): 100A
🔹 Gate-Emitter Voltage (Vge): ±20V
🔹 Collector-Emitter Saturation Voltage (Vce(sat)): 1.8V (Max) @ 50A
🔹 Turn-On Time (Ton): 60ns
🔹 Turn-Off Time (Toff): 200ns
🔹 Power Dissipation (Pd): 250W
🔹 Operating Temperature Range: -55°C to +150°C
🔹 Package Type: TO-247
2. Features:
High Voltage & Current Capability (600V / 50A)
Low Saturation Voltage (Vce(sat)) for Energy Efficiency
Fast Switching Speed – Reduces Switching Losses
High Surge Current Capability (100A Pulsed)
Rugged & Reliable Design for Industrial Use
3. Applications:
✔️ Motor Drives & Industrial Inverters
✔️ Switch Mode Power Supplies (SMPS)
✔️ Uninterruptible Power Supplies (UPS)
✔️ Welding Equipment
✔️ HVAC & Power Conversion Systems
4. Equivalent & Alternative IGBTs:
If G4PC50W is unavailable, consider:
🔹 IRG4PC50W – 600V, 50A
🔹 HGTG50N60A4D – 600V, 50A
🔹 IXGH50N60C3 – 600V, 50A

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26NM60N

26NM60N
  • 26NM60N
  • 26NM60N
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Product Price: Rs 40 / PieceGet Best Price

Product Details:
Channel TypeP Channel
Mounting TypeTO-247
Part Number26NM60N
Country of OriginMade in India

24NM60N TO-247 Original

The 26NM60N is an N-channel Power MOSFET designed for high-efficiency switching applications, particularly in power supplies, motor drivers, and industrial electronics. It is known for its low on-resistance (Rds(on)), high voltage handling, and efficient thermal performance.
Key Specifications:

Drain-Source Voltage (Vds): 600V

Continuous Drain Current (Id): 26A (at 25°C)

Drain-Source Resistance (Rds(on)): ~0.145Ω (typ.)

Gate-Source Voltage (Vgs): ±30V

Total Power Dissipation (Pd): High power dissipation capability

Package Type: TO-247 (for effective heat dissipation)

Features:

High voltage rating (600V) for industrial and power applications

Low Rds(on) for minimal conduction losses

Fast switching capability for high-frequency circuits

Robust design with high current handling

Efficient thermal dissipation in TO-247 package

Applications:

Switch-mode power supplies (SMPS)

Motor control circuits

UPS (Uninterruptible Power Supply) systems

High-voltage inverters and converters

Industrial power applications

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IRFP22N60K

IRFP22N60K
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Product Details:
Channel TypeN Channel
Part NumberIRFP22N60K
Maximum Operating Temperature-40 DegreeC to 150 DegreeC
Current Limit1.7A (Typical)
EfficiencyUp to 80%
Switching Frequency132 kHz (Fixed)

Power MOSFET transistors are semiconductor devices designed for switching and amplifying electrical signals in high-power applications. They are widely used in power supplies, motor control, RF amplification, and inverters due to their high efficiency and fast switching capabilities.
Types of Power MOSFETs

N-Channel MOSFETs – Most commonly used due to their lower ON resistance and higher efficiency.

P-Channel MOSFETs – Used in specific applications where N-channel MOSFETs are not suitable, but have higher resistance.

Enhancement Mode MOSFETs – Default OFF state; require a gate voltage to turn ON.

Depletion Mode MOSFETs – Default ON state; require a gate voltage to turn OFF.

Popular Power MOSFET Models 1. IRF540N (N-Channel)

Voltage: 100V

Current: 33A

Resistance: 44mΩ

Common for DC-DC converters and motor controllers.

2. IRFZ44N (N-Channel)

Voltage: 55V

Current: 49A

Low Rds(ON), making it ideal for automotive applications.

3. IRF3205 (N-Channel)

Voltage: 55V

Current: 110A

High current rating, used in power inverters.

4. STP55NF06 (N-Channel)

Voltage: 60V

Current: 55A

Low gate drive requirements.

5. FQP30N06L (N-Channel, Logic Level)

Voltage: 60V

Current: 32A

Works well with logic-level circuits (e.g., Arduino).

RF Power MOSFETs
If you're looking for high-frequency RF MOSFETs, consider:

MRF150 (500W, 50V)

BLF188XR (1400W, 50V)

MRF101AN (100W, 50V)

MRF300AN (300W, 65V)

Key Parameters to Consider

Drain-Source Voltage (Vds) – Maximum voltage the MOSFET can handle.

Drain Current (Id) – Maximum current capacity.

Rds(ON) (ON Resistance) – Lower values indicate better efficiency.

Gate-Source Voltage (Vgs) – Determines compatibility with logic-level signals.

Power Dissipation – Defines the heat management requirements.

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47N60C3 IGBT Transistor

47N60C3 IGBT Transistor
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Product Price: Rs 45 / PieceGet Best Price

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Product Details:
Channel TypeN Channel
BrandInfineon
Part Number47N60C3
Maximum Gate Source Voltage600V
Maximum Continuous Drain Current47A
Mounting TypeTO247
Pin Count3

47N60C3 TO-247 Original Infineon
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K75T60 IGBT Transistor

K75T60 IGBT Transistor
  • K75T60 IGBT Transistor
  • K75T60 IGBT Transistor
  • K75T60 IGBT Transistor
  • K75T60 IGBT Transistor
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Product Details:
BrandInfineon
Part NumberK75T60
Mounting TypeTO-247
Pin Count3
Channel TypeN

K75T60 TO-247 Infineon Orignle IGBT Transistor

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IXFB70N60

IXFB70N60
  • IXFB70N60
  • IXFB70N60
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Product Details:
Part NumberIXFB70N60
Mounting TypeThrow Hole
Pin Count3
Country of OriginMade in India

IXFB7060 TO274

The IXFB70N60 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. With a 600V collector-emitter voltage (Vce) and 70A continuous collector current (Ic), it is well-suited for motor drives, power inverters, and industrial automation systems.
Features & Specifications:
Collector-Emitter Voltage (Vce): 600V
Continuous Collector Current (Ic): 70A
Low Vce(sat): Reduces conduction losses for improved efficiency
Fast Switching Speed: Optimized for high-frequency applications
High Energy Handling Capability
Package: TO-247 for effective thermal dissipation
Applications:
 

Motor control and industrial drives

Uninterruptible Power Supplies (UPS)

High-voltage DC-DC converters

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30N120FD

30N120FD
  • 30N120FD
  • 30N120FD
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Product Price: Rs 35 / PieceGet Best Price

Product Details:
Part Number30N120FD
Mounting TypeTO-247
Pin Count3
Country of OriginMade in India

30N120 TO247 ORIGINAL

The 30N120FD is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications, offering high efficiency and fast switching performance. It has a 1200V collector-emitter voltage (Vce) and a 30A continuous collector current (Ic), making it suitable for industrial inverters, motor drives, and power conversion systems.
Features & Specifications:
Collector-Emitter Voltage (Vce): 1200V
Continuous Collector Current (Ic): 30A
Low Saturation Voltage (Vce(sat)): Reduces conduction losses
Fast Switching Speed: Optimized for high-frequency applications
Package: TO-247 for improved thermal performance
Applications:
 

Motor control and industrial drives

Inverters and UPS systems

High-voltage power converters

Renewable energy systems (solar inverters)

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40tps 12a mosfet thyristor

40tps 12a mosfet thyristor
  • 40tps 12a mosfet thyristor
  • 40tps 12a mosfet thyristor
  • 40tps 12a mosfet thyristor
  • 40tps 12a mosfet thyristor
  • 40tps 12a mosfet thyristor
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Product Price: Rs 95 / PieceGet Best Price

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Product Details:
Number of Pins3
BrandVishay High Power Products
Part Number40TPS...A/40TPS
Mounting TypeSMD
Package TypeBox
Maximum Operating Temperature- 40 to 125
Rated Average On-State Current1000
Country of OriginMade in India

It appears there might be some confusion regarding the 40TPS12A component. The 40TPS12A is a silicon-controlled rectifier (SCR), not an RF MOSFET. SCRs are semiconductor devices used for controlling power in AC/DC systems, commonly found in applications like motor controls, heating systems, and power switching.
Key Specifications of the 40TPS12A SCR:
 

Voltage Rating: 1200V

Current Rating: 35A (average on-state current)

Package Type: TO-247AC

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G4PC40UD

G4PC40UD
  • G4PC40UD
  • G4PC40UD
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Product Price: Rs 55 / PieceGet Best Price

Product Details:
Current1.5 A
Part NumberG4PC40UD
Channel TypeN-Channel IGBT
Gate-Emitter Voltage (Vge)+-20V
Operating Temperature Range-55 DegreeC to +150 DegreeC
Package TypeTO-247

G4PC40UD TO-247 ORIGINAL

The G4PC40UD is an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications, such as inverters, motor drives, and power supplies. It combines low conduction losses and fast switching performance, making it ideal for energy-efficient power circuits.
1. General Specifications:
🔹 Type: N-Channel IGBT
🔹 Collector-Emitter Voltage (Vce): 600V
🔹 Continuous Collector Current (Ic): 40A @ 25°C
🔹 Pulsed Collector Current (Icm): 80A
🔹 Gate-Emitter Voltage (Vge): ±20V
🔹 Collector-Emitter Saturation Voltage (Vce(sat)): 1.9V (Max) @ 40A
🔹 Switching Frequency: High-Speed Switching
🔹 Turn-On Time (Ton): 60ns
🔹 Turn-Off Time (Toff): 200ns
🔹 Power Dissipation (Pd): 190W
🔹 Operating Temperature Range: -55°C to +150°C
🔹 Package Type: TO-247
2. Features:
Low Saturation Voltage (Vce(sat)) – Reduces conduction losses
Fast Switching Performance – Suitable for high-frequency circuits
High Current Handling (40A Continuous, 80A Pulsed)
Robust & Durable Design – Withstands voltage and current surges
TO-247 Package – Ideal for industrial and power applications
3. Applications:
✔️ Motor Control & Inverter Circuits
✔️ High-Frequency Power Supplies (SMPS)
✔️ Uninterruptible Power Supplies (UPS)
✔️ Welding Equipment
✔️ Power Conversion & Industrial Automation
4. Equivalent & Alternative IGBTs:
If G4PC40UD is unavailable, consider:
🔹 IRG4PC50UD – 600V, 50A
🔹 HGTG40N60A4D – 600V, 40A
🔹 IXGH40N60B3 – 600V, 40A

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NJW0302G NJE0281G

NJW0302G NJE0281G
  • NJW0302G NJE0281G
  • NJW0302G NJE0281G
  • NJW0302G NJE0281G
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Product Price: Rs 110 / PieceGet Best Price

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Product Details:
Current1 A
Transistor PolarityNPN
BrandON
Mounting TypeSMD
Part NumberNJW0302G NJW0281G
Country of OriginMade in India

NJW0302G NJW0281G ORIGINAL TO-247ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.

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10NM60 TO-220 Resistors

10NM60 TO-220 Resistors
  • 10NM60 TO-220 Resistors
  • 10NM60 TO-220 Resistors
  • 10NM60 TO-220 Resistors
  • 10NM60 TO-220 Resistors
  • 10NM60 TO-220 Resistors
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Product Price: Rs 20 / PieceGet Best Price

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Product Details:
Resistance100 Ohm
Power Rating1/8W
Usage/ApplicationElectrical Industry
Mounting typeSMD
ShapeU Shape

10NM60 TO-220 ORIGINAL ST PLASTIC BODYARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.

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ST55NM60ND

ST55NM60ND
  • ST55NM60ND
  • ST55NM60ND
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Product Price: Rs 30 / PieceGet Best Price

Product Details:
Channel TypeN Channel
Mounting TypeThrow Hole
Part NumberST55NM60ND
Country of OriginMade in India

ST55NM60ND TO247

  
The ST55NM60ND is an N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. It features a 600V voltage rating and 55A current capacity, making it ideal for motor drives, inverters, UPS systems, and switching power supplies. With low collector-emitter saturation voltage (Vce(sat)), it ensures minimal conduction losses, improving overall efficiency. The transistor is optimized for high-speed switching, reducing energy loss during operation. Built with advanced trench gate field-stop technology, it offers superior thermal stability and ruggedness. The ST55NM60ND comes in a TO-247 package, providing excellent heat dissipation for demanding industrial and power electronics applications.

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