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Mosfet Transistor

Our product range includes a wide range of 2sk3878 mosfet transistor, g60n100bntd igbt transistor, irfp460 to-247 mosfet transistor, irfpg50 power mosfet module, 2n6292 and irf640.

2SK3878 MOSFET Transistor

2SK3878 MOSFET Transistor
  • 2SK3878 MOSFET Transistor
  • 2SK3878 MOSFET Transistor
  • 2SK3878 MOSFET Transistor
  • 2SK3878 MOSFET Transistor
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Product Details:
Channel TypeN Channel
BrandToshiba
Part Number2SK3878
Mounting TypeTO-247
Country of OriginMade in India
2SK3878 TO-247 OriginalARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
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G60N100BNTD IGBT TRANSISTOR

G60N100BNTD IGBT TRANSISTOR
  • G60N100BNTD IGBT TRANSISTOR
  • G60N100BNTD IGBT TRANSISTOR
  • G60N100BNTD IGBT TRANSISTOR
  • G60N100BNTD IGBT TRANSISTOR
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Product Details:
Current15 A
BrandFairchild
Part NumberG60N100
Mounting TypeTO-264
Pin Count3
Channel TypeN
Country of OriginMade in India

 FGH60N60 G60N100 FGA60N65 TO-247 And   TO-264  Original     

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IRFP460 TO-247 MOSFET Transistor

IRFP460 TO-247 MOSFET Transistor
  • IRFP460 TO-247 MOSFET Transistor
  • IRFP460 TO-247 MOSFET Transistor
  • IRFP460 TO-247 MOSFET Transistor
  • IRFP460 TO-247 MOSFET Transistor
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Minimum Order Quantity: 100 Piece

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Product Details:
Channel TypeN Channel
BrandIOR
Mounting TypeTO-247
Country of OriginMade in India

IRFP140 IRFP150 IRFP250 IRFP260 IRFP350 IRFP360 IRFP450 IRFP460 TO247

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IRFPG50 Power MOSFET Module

IRFPG50 Power MOSFET Module
  • IRFPG50 Power MOSFET Module
  • IRFPG50 Power MOSFET Module
  • IRFPG50 Power MOSFET Module
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Product Details:
Voltage220V
Part NumberIRFPG50
Channel TypeN
Efficiency90%
Drain-Source Voltage (Vdss)1000V
Power Dissipation (PD)190W

IRFPG40 IRFPG50 TO247
The IRFPG40 and IRFPG60 are high-voltage Power MOSFETs from International Rectifier (now Infineon Technologies). These transistors are not IGBTs but rather N-channel MOSFETs designed for high-voltage switching applications, including power supplies, motor control, and industrial electronics.
1. IRFPG40 MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 1000V
🔹 Continuous Drain Current (Id): 4.7A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 18.8A
🔹 RDS(on) (Drain-Source Resistance): 3.5Ω (Max)
🔹 Gate Threshold Voltage (Vgs, th): 2.0 - 4.0V
🔹 Power Dissipation (Pd): 190W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-247
Applications:
✔️ Switch Mode Power Supplies (SMPS)
✔️ High-Voltage Inverters
✔️ Industrial Motor Control
✔️ Induction Heating Systems
2. IRFPG60 MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 1200V
🔹 Continuous Drain Current (Id): 3.3A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 13.2A
🔹 RDS(on) (Drain-Source Resistance): 4.6Ω (Max)
🔹 Gate Threshold Voltage (Vgs, th): 2.0 - 4.0V
🔹 Power Dissipation (Pd): 125W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-247
 
Applications:
✔️ High-Voltage Power Converters
✔️ Industrial UPS Systems
✔️ HVAC Control Circuits
✔️ Battery Chargers & Power Inverters

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2N6292

2N6292
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  • 2N6292
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Product Details:
Channel TypeP Channel
BrandFairchild ON Bell Etc
Part Number2N6292
Country of OriginMade in India

2N6292 TO220 Original

The 2N6292 is a high-power NPN transistor designed for audio and general-purpose power amplifier applications. It is capable of handling high voltages and currents, making it suitable for use in power amplifiers, audio output stages, and other high-current applications. Here's a brief overview of its key specifications:

Type: NPN power transistor

Collector-Emitter Voltage (Vceo): 80V

Collector Current (Ic): 15A

Power Dissipation (Ptot): 150W

DC Current Gain (hFE): Typically 20-100 at 8A, Vce = 10V

Package Type: TO-3 metal can package

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IRF640

IRF640
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  • IRF640
  • IRF640
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Minimum Order Quantity: 100 Piece

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Product Details:
Channel TypeP Channel
BrandST
Part NumberIRF640N
Mounting TypeTO-220
Country of OriginMade in India

IRF630N IRF640N To-220 ORIGINAL

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24N60M2

24N60M2
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Product Details:
Channel TypeN Channel
Voltage4V
Part Number24N60M2
Country of OriginMade in India

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IRF3205

IRF3205
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Product Details:
Channel TypeP Channel
Part NumberIRF3205
Mounting TypeTO-220
Country of OriginMade in India

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9N90C

9N90C
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Product Details:
Current1.5 A
Part Number9N90C
Channel TypeN Channel
Package TypeTO-220 / TO-247
FeaturesHigh Voltage Capability
Drain-Source Voltage (Vdss)900V

9N90C MOSFET Transistor – Specifications & Features
The 9N90C is a high-voltage N-Channel MOSFET designed for switch-mode power supplies (SMPS), motor control, and industrial power applications. It offers low on-resistance (RDS(on)), high efficiency, and fast switching capabilities.
1. 9N90C MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 900V
🔹 Continuous Drain Current (Id): 9A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 36A
🔹 RDS(on) (Drain-Source Resistance): 1.2Ω (Max)
🔹 Gate Threshold Voltage (Vgs, th): 2.0 - 4.0V
🔹 Gate Charge (Qg): 85nC
🔹 Power Dissipation (Pd): 290W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-220 / TO-247
2. Features:
High Voltage Capability (900V) – Suitable for high-power applications
Low On-Resistance (RDS(on)) – Ensures efficient power conversion
Fast Switching Speed – Reduces switching losses
High Surge Current Capability – Protects against voltage spikes
Rugged and Reliable Design – Ideal for industrial use
3. Applications:
✔️ Switch Mode Power Supplies (SMPS)
✔️ Industrial Inverters & Power Converters
✔️ HVAC & Motor Control Systems
✔️ Solar & UPS Power Management
✔️ High-Frequency Power Circuits.

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2SK3599

2SK3599
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  • 2SK3599
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Product Details:
Channel TypeP Channel
Part Number2SK3599
Mounting TypeThrow Hole
Country of OriginMade in India

2SK3599 TO220 ORIGINAL

The 2SK3599 is an N-channel MOSFET designed for high-power switching applications. It features a drain-to-source voltage (Vds) of 900V and a continuous drain current (Id) of 10A, making it suitable for switching power supplies, motor control, and high-voltage applications.
Features & Specifications:
Drain-Source Voltage (Vds): 900V
Continuous Drain Current (Id): 10A
Low On-Resistance (Rds(on)): Improves efficiency and reduces heat generation
High-Speed Switching Capability: Optimized for high-frequency operation
Gate Threshold Voltage (Vgs): Typically 3V – 5V
Package: TO-3P for effective thermal dissipation
Applications:

Switching Power Supplies (SMPS)

Motor Control Circuits

High-Voltage DC-DC Converters

Inverters & Industrial Power Systems

Renewable Energy & Power Management

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5N60

5N60
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Product Details:
Current15 A
Part Number5N60
Mounting TypeTO-220
Pin Count3
Country of OriginMade in India

5N60 TO220

Although the “5N60” is sometimes mistakenly grouped with IGBTs, it is actually a high‐voltage, N‑channel power MOSFET. It is designed for high‐speed switching applications such as power supplies, PWM motor controls, DC‑DC converters, and bridge circuits. Key features include:

High Voltage & Current Capability: Rated for 600 V and a continuous drain current of about 4.5–5 A.

Low On‑State Resistance: R₍DS(on)₎ is typically ≤2.2 Ω at VGS = 10 V, which minimizes conduction losses.

Fast Switching Performance: Low gate charge (around 15 nC) and low reverse transfer capacitance (approximately 6.5 pF) enable quick switching.

Robust Avalanche Characteristics: Its rugged design helps protect against transient voltage spikes, ensuring reliable performance in demanding conditions.

Package Options: Commonly available in TO‑220 and related packages, offering good thermal dissipation for high‐power applications.

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6N60C

6N60C
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Product Details:
Current15 A
Packaging SizeTO220
Part Number6N60C
Mounting TypeTO-220
Pin Count3
Country of OriginMade in India

6N60C 6N80 TO220 ORIGINAL

The 6N60C is an N-channel IGBT optimized for high-speed switching applications. It is widely used in power supplies, motor control, and inverter circuits due to its efficient energy management.
Collector-Emitter Voltage (Vce): 600V
Continuous Collector Current (Ic): 6A
Low Saturation Voltage (Vce(sat)): Improves efficiency
Fast Switching Speed: Ideal for high-frequency applications
Package: TO-220 for compact and efficient thermal management
60N80 IGBT Transistor
The 60N80 is a high-power IGBT designed for industrial and power electronics applications. It provides high voltage tolerance and efficient switching, making it suitable for motor drives and power inverters.
Collector-Emitter Voltage (Vce): 800V
Continuous Collector Current (Ic): 60A
Low Vce(sat): Reduces power dissipation
High-Speed Switching Capability
Package: TO-247 for better heat dissipation
Applications of 6N60C & 60N80 IGBTs:

Motor Drives & Industrial Automation

Switching Power Supplies (SMPS)

DC-AC Inverters for Renewable Energy Systems

Uninterruptible Power Supplies (UPS)

Electric Vehicle (EV) Power Management

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7N65

7N65
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  • 7N65
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Product Details:
Voltage4V
Country of OriginMade in India

7N60 7N65 TO220
7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

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9N90C

9N90C
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Product Details:
Channel TypeP Channel
Mounting TypeTO-220
Part Number9N90C
Country of OriginMade in India

9N90C TO247 And TO220

The 9N90C is an N-channel power MOSFET designed for high-voltage and high-current switching applications. It features a 900V drain-to-source voltage (Vds) and 9A continuous drain current (Id), making it suitable for power supplies, motor control, and industrial switching circuits.
Features & Specifications:
 
Drain-Source Voltage (Vds): 900V
Continuous Drain Current (Id): 9A
Low Rds(on): Ensures efficient power handling
Fast Switching Speed: Ideal for high-frequency applications

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10N120BND

10N120BND
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Product Details:
Current1.5 A
Part Number10N120BND
Package TypeTO247
Model Name/Number10N120BND
Country of OriginMade in India
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11N120BND

11N120BND
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  • 11N120BND
  • 11N120BND
  • 11N120BND
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Product Details:
Current15 A
Part Number11N120BND
Channel TypeN
UsageIndustrial Power Control
Package TypeTO-247
Operating Temperature Range-55 DegreeC to 150 DegreeC

11N60C3 11N80C3 11N120BND TO-247 And TO-220 ORIGINAL
1. 11N60C3 MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 600V
🔹 Continuous Drain Current (Id): 11A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 44A
🔹 RDS(on) (Drain-Source Resistance): 0.33Ω (Max)
🔹 Gate Charge (Qg): 46nC
🔹 Power Dissipation (Pd): 179W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-220 / TO-247
Applications:
✔️ Switch Mode Power Supplies (SMPS)
✔️ LED Drivers & Power Converters
✔️ Industrial Power Systems
2. 11N80C3 MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 800V
🔹 Continuous Drain Current (Id): 11A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 44A
🔹 RDS(on) (Drain-Source Resistance): 0.68Ω (Max)
🔹 Gate Charge (Qg): 68nC
🔹 Power Dissipation (Pd): 214W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-220 / TO-247
Applications:
✔️ High-Voltage Switching Power Supplies
✔️ HVAC & Motor Control Systems
✔️ Solar Inverters & UPS Systems
3. 11N120BND MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 1200V
🔹 Continuous Drain Current (Id): 11A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 44A
🔹 RDS(on) (Drain-Source Resistance): 1.4Ω (Max)
🔹 Gate Charge (Qg): 110nC
🔹 Power Dissipation (Pd): 312W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-247
Applications:
✔️ High-Voltage Power Converters & Inverters
✔️ Industrial Power Control
✔️ HVAC Systems & Energy Applications
4. Key Differences – 11N60C3 vs. 11N80C3 vs. 11N120BNDFeature11N60C311N80C311N120BNDVdss (Drain-Source Voltage)600V800V1200VId (Continuous Drain Current @ 25°C)11A11A11ARDS(on) (Max)0.33Ω0.68Ω1.4ΩGate Charge (Qg)46nC68nC110nCPower Dissipation (Pd)179W214W312WPackageTO-220 / TO-247TO-220 / TO-247TO-247Application FocusSMPS, LED DriversHV Power Supplies, Solar InvertersIndustrial Inverters, High-Power Systems5. Advantages of 11N Series MOSFETs:
 
High Voltage Handling (Up to 1200V)
Low On-Resistance (Efficient Power Conversion)
Fast Switching Speeds for High-Frequency Applications
Enhanced Thermal Stability & Durability.

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IRFB7545

IRFB7545
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  • IRFB7545
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Product Details:
Channel TypeP Channel
Mounting TypeTO220
Part NumberIRFB7545
Country of OriginMade in India

IRFB7545 TO220

The IRFB7545 is an N-channel Power MOSFET designed for high-efficiency power switching applications. With a drain-to-source voltage (Vds) of 60V and a continuous drain current (Id) of 98A, it is ideal for high-current, low-voltage applications such as motor drives, power supplies, and DC-DC converters.
Features & Specifications:
Drain-Source Voltage (Vds): 60V
Continuous Drain Current (Id): 98A
Low Rds(on): 4.5mΩ (reduces conduction losses and improves efficiency)
Fast Switching Speed: Suitable for high-frequency applications
High Current Handling: Optimized for power electronics and motor control
Package: TO-220 for efficient heat dissipation
Applications:
 

DC-DC converters

Power management systems

Motor control circuits

Battery-powered devices

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IRFP250N

IRFP250N
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Product Details:
Channel TypeN Channel
Transistor TypeNPN
BrandIOR
Part NumberIRFP250N
Mounting TypeTO-247

IRFP250N TO-247 Original
The IRFP250N is a high-performance N-channel Power MOSFET designed for switching applications, motor control, power supplies, and industrial electronics. It offers low Rds(on), high current capacity, and fast switching, making it ideal for high-efficiency power management.
Key Specifications:
Drain-Source Voltage (Vds): 200V
Continuous Drain Current (Id): 30A (at 25°C)
On-Resistance (Rds(on)): 0.075Ω (max)
Gate Threshold Voltage (Vgs): 2.0V – 4.0V
Power Dissipation (Pd): 214W
Package: TO-247 for excellent thermal management
Features:
Low On-Resistance for reduced power loss
High-Speed Switching for improved efficiency
Robust and Reliable Design
High Power Handling Capability
Applications:

Switching Power Supplies (SMPS)

DC-DC Converters & Inverters

Motor Control & Industrial Automation

Renewable Energy Systems (Solar Inverters, UPS)

Battery Management & High-Power Switching Circuits

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30N60C

30N60C
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Product Details:
Channel TypeP Channel
Mounting TypeTO-247
Part Number30N60C3
Country of OriginMade in India

30N60C TO247

The 30N60C is an N-channel power MOSFET designed for high-power switching applications, including power supplies, motor controllers, inverters, and industrial automation. It offers a 600V drain-to-source voltage (Vds) and 30A continuous drain current (Id), making it ideal for high-voltage, high-efficiency circuits.
Features & Specifications:
Drain-Source Voltage (Vds): 600V
Continuous Drain Current (Id): 30A
Low Rds(on): Ensures minimal conduction loss
High-Speed Switching: Optimized for efficiency
Package Options: TO-247, TO-220 for superior heat dissipation
Applications:
 

Switched-Mode Power Supplies (SMPS)

Motor drives and industrial control

High-voltage DC-DC converters

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17N80C

17N80C
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Product Details:
Channel TypeP Channel
BrandInfineon
Mounting TypeTO-247
Part Number17N80C3
Country of OriginMade in India

17N80C3 TO-247

The 17N80C is an N-channel power MOSFET designed for high-voltage and high-current switching applications. With an 800V drain-to-source voltage (Vds) and 17A continuous drain current (Id), it is ideal for power supplies, motor controls, and industrial applications.
Features & Specifications:
Drain-Source Voltage (Vds): 800V
Continuous Drain Current (Id): 17A
Low Rds(on): Ensures high efficiency and minimal conduction loss
Fast Switching Speed: Suitable for high-frequency applications
Package Options: TO-220, TO-247 for efficient heat dissipation
Applications:
 

Switched-Mode Power Supplies (SMPS)

Industrial motor drives

Power factor correction (PFC) circuits

High-voltage DC-DC converters

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IRFP9240

IRFP9240
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Product Details:
Channel TypeP Channel
Part NumberIRFP9240
Mounting TypeTO-247

IRFP9240 TO-247

The IRFP9240 is a P-channel power MOSFET designed for high-power switching and amplification applications. It has a drain-to-source voltage (Vds) of -200V and a continuous drain current (Id) of -12A, making it ideal for audio amplifiers, power management circuits, and switching power supplies.
Features & Specifications:
Drain-Source Voltage (Vds): -200V
Continuous Drain Current (Id): -12A
Low Rds(on): 0.5Ω for efficient power handling
High-Speed Switching: Suitable for high-frequency applications
Package: TO-247 for effective thermal dissipation
Enhanced Avalanche Energy Capability for durability in harsh conditions
Applications:
 

High-Power Audio Amplifiers

Switching Power Supplies (SMPS)

DC-DC Converters

Motor Control Circuits

Renewable Energy Systems

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IRF540N

IRF540N
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  • IRF540N
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Product Details:
Channel TypeP Channel
Part NumberIRF540N
Mounting TypeTO-220
Country of OriginMade in India

IRF540N TO-220 Original

The IRF540N is an N-channel power MOSFET widely used in power switching and motor control applications. With a drain-to-source voltage (Vds) of 100V and a continuous drain current (Id) of 33A, it is ideal for high-efficiency power management circuits.
Features & Specifications:
Drain-Source Voltage (Vds): 100V
Continuous Drain Current (Id): 33A
Low Rds(on): 44mΩ (reduces conduction losses)
Fast Switching Speed: Suitable for high-frequency applications
Gate Threshold Voltage (Vgs): 2V – 4V
Package: TO-220 for efficient heat dissipation
High Power Dissipation Capability
Applications:
 

DC-DC Converters

Motor Controllers & Drivers

Switched-Mode Power Supplies (SMPS)

Solar Inverters & Battery Management Systems

Arduino & Microcontroller-Based Switching Circuits

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23N50

23N50
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  • 23N50
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Product Details:
Channel TypeP Channel
Part Number23N50
Mounting TypeTO-247
Country of OriginMade in India

23N50E TO-247 ORIGINAL
The 23N50E is an N-channel power MOSFET designed for high-voltage switching applications. With a drain-to-source voltage (Vds) of 500V and a continuous drain current (Id) of 23A, it is widely used in power supplies, motor control, and inverter circuits.
Features & Specifications:
Drain-Source Voltage (Vds): 500V
Continuous Drain Current (Id): 23A
Low Rds(on): Reduces conduction losses for higher efficiency
Fast Switching Speed: Ideal for high-frequency applications
High Voltage and Current Handling Capability
Package: TO-247 for efficient thermal dissipation
Applications:

Switching Power Supplies (SMPS)

DC-DC Converters & Inverters

Motor Control & Industrial Automation

Solar Power Systems & UPS

High-Power LED Drivers

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IRF9640

IRF9640
  • IRF9640
  • IRF9640
  • IRF9640
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Product Price: Rs 15 / PieceGet Best Price

Product Details:
Channel TypeP Channel
BrandIOR
Part NumberIRF9640
Mounting TypeTO-220
Country of OriginMade in India

IRF9630 IRF9640 TO-220

The IRF9630 and IRF9640 are P-channel power MOSFETs designed for high-power switching and amplification applications. They are commonly used in power management circuits, motor control, and audio amplifier circuits due to their efficient performance and robust design.
IRF9630 MOSFET Specifications:
Drain-Source Voltage (Vds): -200V
Continuous Drain Current (Id): -6.5A
On-Resistance (Rds(on)): 0.8Ω
Fast Switching Speed: Ideal for high-frequency applications
Package: TO-220
IRF9640 MOSFET Specifications:
Drain-Source Voltage (Vds): -200V
Continuous Drain Current (Id): -11A
On-Resistance (Rds(on)): 0.5Ω
Fast Switching for High-Efficiency Applications
Package: TO-220
Applications:

Switched-Mode Power Supplies (SMPS)

DC-DC Converters

High-Power Audio Amplifiers

Motor Control Circuits

Battery Management & Solar Power Systems

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IRFP260N

IRFP260N
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  • IRFP260N
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Product Price: Rs 25 / PieceGet Best Price

Product Details:
Channel TypeN Channel
Transistor TypeNPN
BrandIOR
Part NumberIRFP260N
Mounting TypeTO-247

IRFP260N TO-247 Original
The IRFP260N is a high-power N-channel MOSFET designed for switching applications, power supplies, and motor control. It features low Rds(on), high current capacity, and fast switching performance, making it ideal for high-efficiency power conversion applications.
Key Specifications:
Drain-Source Voltage (Vds): 200V
Continuous Drain Current (Id): 50A (at 25°C)
On-Resistance (Rds(on)): 0.04Ω (max)
Gate Threshold Voltage (Vgs): 2.0V – 4.0V
Power Dissipation (Pd): 300W
Package: TO-247 for excellent heat dissipation
Features:
Low On-Resistance for minimal power loss
Fast Switching Speed for high-frequency applications
High Power Handling Capability
Rugged and Reliable Design
Applications:

Switching Power Supplies (SMPS)

DC-DC Converters & Inverters

Motor Control & Industrial Automation

Solar Inverters & Uninterruptible Power Supplies (UPS)

Battery Management & High-Power Switching Circuits

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IRFP450

IRFP450
  • IRFP450
  • IRFP450
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Product Details:
Channel TypeN Channel
Transistor TypeNPN
BrandVishay
Part NumberIRFP450
Mounting TypeTO-247

IRFP450 TO-247 Original

The IRFP450 is an N-channel Power MOSFET designed for high-power switching applications, including switching power supplies, motor control, and inverters. It features low Rds(on), high-speed switching, and robust thermal performance.
Key Specifications:
Drain-Source Voltage (Vds): 500V
Continuous Drain Current (Id): 14A (at 25°C)
On-Resistance (Rds(on)): 0.4Ω (max)
Gate Threshold Voltage (Vgs): 2.0V – 4.0V
Power Dissipation (Pd): 190W
Package: TO-247 for excellent thermal management
Features:
✅ High voltage and current handling
✅ Low conduction and switching losses
✅ Fast switching speed for high-frequency applications
✅ Rugged and reliable design
Applications:

Switching Power Supplies (SMPS)

DC-DC Converters & Inverters

Motor Control & Industrial Automation

Solar Power Systems & UPS

High-Voltage Pulse Circuits.

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H15R1203

H15R1203
  • H15R1203
  • H15R1203
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Product Details:
Current15 A
BrandIntel
Part NumberH15R1203
Mounting TypeTO247
Pin Count3

H15R1203 IGBT Transistor

The H15R1203 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It offers low conduction losses, high efficiency, and fast switching speeds, making it ideal for industrial and energy-efficient applications.
Key Specifications:
Collector-Emitter Voltage (Vce): 1200V
Continuous Collector Current (Ic): 15A
Saturation Voltage (Vce(sat)): Low for improved efficiency
Switching Speed: Optimized for high-frequency applications
Package: Standard TO-247 for efficient heat dissipation
Features:
Low Switching Losses for improved energy efficiency
High Voltage & Current Handling for industrial use
Robust and Reliable Design
Fast Turn-On & Turn-Off Speeds
Applications:

Motor Drives & Industrial Automation

Power Inverters & UPS Systems

Renewable Energy Systems (Solar & Wind Inverters)

HVAC & Electric Vehicle (EV) Power Systems

High-Frequency Switching Applications

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110N8F6

110N8F6
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Product Details:
Channel TypeP Channel
Country of OriginMade in India

110N8F6 TO-220

The 110N8F6 is an N-channel power MOSFET designed for high-efficiency power switching applications. With a drain-to-source voltage (Vds) of 80V and a continuous drain current (Id) of 110A, it is ideal for power management, motor control, and DC-DC conversion in industrial and automotive applications.

Features & Specifications:

โœ” Drain-Source Voltage (Vds): 80V
โœ” Continuous Drain Current (Id): 110A
โœ” Low Rds(on): Ensures minimal power loss and high efficiency
โœ” Fast Switching Speed: Suitable for high-frequency applications
โœ” Package: TO-220, D2PAK, or similar for better thermal management
โœ” Applications:

 

  • DC-DC converters
  • Motor controllers
  • Battery management systems (BMS)
  • Power supply circuits
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24N60M2

24N60M2
  • 24N60M2
  • 24N60M2
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Product Price: Rs 30 / PieceGet Best Price

Product Details:
Channel TypeN Channel
Voltage600V
Country of OriginMade in India

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24N60

24N60
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  • 24N60
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Product Details:
Channel TypeN Channel
Part Number24N60
Maximum Operating Temperature150 Degree C
Pin Count3
UsageElectronic Use
ColorBlack

FQA24N60 TO-24724N60M2 TO-247 Original

The 24N60 is a designation used by various manufacturers for N-channel enhancement-mode power MOSFETs designed to handle high voltages and currents. While specific parameters can vary between manufacturers, these transistors typically share common characteristics suitable for high-power applications.
General Features:
 

Drain-Source Voltage (V_DS): 600 V

Continuous Drain Current (I_D): Approximately 17 to 24 A, depending on the specific model and manufacturer

On-Resistance (R_DS(on)): Typically ranges from 0.16 Ω to 0.175 Ω

Gate Charge (Q_g): Designed for low gate charge to facilitate efficient switching

Package Types: Commonly available in TO-220, TO-220FP, TO-247, and D2PAK packages

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FDA59N30

FDA59N30
  • FDA59N30
  • FDA59N30
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Product Details:
Channel TypeN Channel
Voltage600V
Mounting TypeTO-247
BrandON
Part NumberFDA59N30

FDA59N30 TO-247

The FDA59N30 is an N-Channel MOSFET designed for high-power switching applications, including power supplies, motor control, and high-efficiency converters.
Key Specifications:

Type: N-Channel MOSFET

Drain-Source Voltage (Vds): 300V

Continuous Drain Current (Id): 59A (at 25°C)

Pulsed Drain Current (Idp): 236A

Gate-Source Voltage (Vgs): ±20V

Drain-Source On-Resistance (Rds(on)): 0.028Ω (typical at Vgs = 10V, Id = 29.5A)

Total Power Dissipation (Ptot): 300W

Threshold Voltage (Vgs(th)): 2V - 4V

Package Type: TO-3P

Applications:
✔ High-efficiency switching power supplies
✔ Motor control and industrial drives
✔ DC-DC converters
✔ Inverter circuits.

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FQA28N50

FQA28N50
  • FQA28N50
  • FQA28N50
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Product Price: Rs 28 / PieceGet Best Price

Product Details:
Voltage600V
Channel TypeN Channel
Country of OriginMade in India

FQA28N50 TO-247 Original

The FQA28N50 is an N-Channel MOSFET designed for high-power switching applications, such as power supplies, motor drives, and industrial inverters. It offers high voltage and current handling capabilities with efficient performance.
Key Specifications:

Type: N-Channel MOSFET

Drain-Source Voltage (Vds): 500V

Continuous Drain Current (Id): 28A (at 25°C)

Pulsed Drain Current (Idp): 112A

Gate-Source Voltage (Vgs): ±30V

Drain-Source On-Resistance (Rds(on)): 0.095Ω (typical at Vgs = 10V, Id = 14A)

Total Power Dissipation (Ptot): 300W

Threshold Voltage (Vgs(th)): 2.0V - 4.0V

Package Type: TO-3P

Applications:
✔ High-power switching power supplies
✔ Motor control and industrial drives
✔ DC-DC and AC-DC converters
✔ Inverter circuits.

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P75NF75

P75NF75
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Product Details:
Channel TypeP Channel
Voltage4V
BrandST
Part NumberP75NF75
Country of OriginMade in India

P75NF75 TO-220 Original St

The P75NF75 is an N-Channel MOSFET designed for high-power switching applications, commonly used in automotive electronics, power management, and motor control.
Key Specifications:

Type: N-Channel MOSFET

Drain-Source Voltage (Vds): 75V

Continuous Drain Current (Id): 80A (at 25°C)

Pulsed Drain Current (Idp): 300A

Gate-Source Voltage (Vgs): ±20V

Drain-Source On-Resistance (Rds(on)): 0.009Ω (typical at Vgs = 10V, Id = 37A)

Total Power Dissipation (Ptot): 110W

Threshold Voltage (Vgs(th)): 2V - 4V

Package Type: TO-220

Applications:
✔ Automotive power switching
✔ Motor control and industrial drives
✔ DC-DC converters
✔ Battery management systems

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50JR22

50JR22
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Product Details:
Current15 A
BrandToshibha
Part Number50JR22
Pin Count3
Collector-Emitter Voltage600V
Power Dissipation230 W

50JR22 TO-247 Original Toshiba

The GT50JR22 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Toshiba. It is designed for high-power switching applications, particularly in soft switching scenarios.
Key Features:

Collector-Emitter Voltage (V<sub>CE</sub>): 600 V

Continuous Collector Current (I<sub>C</sub>): 50 A

Saturation Voltage (V<sub>CE(sat)</sub>): 1.55 V

Power Dissipation: 230 W

Package: TO-3P(N) with 3 pins

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P80NF55

P80NF55
  • P80NF55
  • P80NF55
  • P80NF55
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Product Details:
Voltage4V
BrandST
Part NumberP80NF55
Country of OriginMade in India

P80NF55 P80NF70 TO220

These are N-channel Power MOSFETs designed for high-current and low-voltage applications such as power management, motor control, and switching regulators.
1. P80NF55 MOSFET

Drain-Source Voltage (V_DSS): 55V

Continuous Drain Current (I_D): 80A

Pulsed Drain Current (I_DM): 320A

Gate-Source Voltage (V_GS): ±20V

Drain-Source Resistance (R_DS(on)): 0.009Ω (max)

Power Dissipation (P_D): 110W

Package Type: TO-220 / D²PAK

Features:

Low on-resistance for high efficiency

High-speed switching

Avalanche-rated

Suitable for automotive and industrial applications

2. P80NF70 MOSFET

Drain-Source Voltage (V_DSS): 70V

Continuous Drain Current (I_D): 80A

Pulsed Drain Current (I_DM): 320A

Gate-Source Voltage (V_GS): ±20V

Drain-Source Resistance (R_DS(on)): 0.007Ω (max)

Power Dissipation (P_D): 120W

Package Type: TO-220 / D²PAK

Features:

Very low R_DS(on) for high efficiency

High-current capability

Ideal for high-power applications such as DC-DC converters, motor drivers, and inverters.

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IRFP150N

IRFP150N
  • IRFP150N
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Product Details:
Channel TypeN Channel
Transistor TypeNPN
BrandIOR
Part NumberIRFP150N
Mounting TypeTO-247

IRFP150 TO-247 Original

The IRFP150N is an N-channel MOSFET designed for high-power switching applications. Here are its key specifications and features:
Key Specifications:

Drain-Source Voltage (V_DSS): 100V

Continuous Drain Current (I_D): 42A

Pulsed Drain Current (I_DM): 170A

Gate-Source Voltage (V_GS): ±20V

Drain-Source Resistance (R_DS(on)): 0.042Ω (max)

Total Gate Charge (Q_G): 100nC

Power Dissipation (P_D): 160W

Package Type: TO-247

Features:

Low on-resistance for improved efficiency

Fast switching speed

High current-handling capability

Suitable for power supplies, motor controls, and other high-power applications

Fully avalanche-rated.

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W12NK90Z

W12NK90Z
  • W12NK90Z
  • W12NK90Z
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Product Details:
Channel TypeP Channel
BrandST
Part NumberW12NK90Z
W12NK90Z TO-247 ORIGINAL

The W12NK90Z is an N-Channel MOSFET designed for high-voltage switching applications, including power supplies, lighting circuits, and motor control.

Key Specifications:
  • Type: N-Channel MOSFET
  • Drain-Source Voltage (Vds): 900V
  • Continuous Drain Current (Id): 12A (at 25°C)
  • Pulsed Drain Current (Idp): 48A
  • Gate-Source Voltage (Vgs): ±30V
  • Drain-Source On-Resistance (Rds(on)): 0.85Ω (typical at Vgs = 10V, Id = 6A)
  • Total Power Dissipation (Ptot): 280W
  • Threshold Voltage (Vgs(th)): 3V - 5V
  • Package Type: TO-247
  • Applications:
    โœ” Switch-mode power supplies (SMPS)
    โœ” Industrial power control
    โœ” LED drivers
    โœ” High-voltage converters
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FDA59N30

FDA59N30
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Product Details:
Voltage4V
Country of OriginMade in India
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
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G4PC50U

G4PC50U
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Product Price: Rs 55 / PieceGet Best Price

Product Details:
Channel TypeP Channel
Country of OriginMade in India
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
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IRF2807

IRF2807
  • IRF2807
  • IRF2807
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Product Details:
Channel TypeP Channel
Part NumberIRF2807
Mounting TypeTO-220
Country of OriginMade in India
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
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