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Mosfet Transistor
2SK3878 MOSFET Transistor
Product Brochure
Channel Type | N Channel |
Brand | Toshiba |
Part Number | 2SK3878 |
Mounting Type | TO-247 |
Country of Origin | Made in India |
G60N100BNTD IGBT TRANSISTOR
Product Brochure
Current | 15 A |
Brand | Fairchild |
Part Number | G60N100 |
Mounting Type | TO-264 |
Pin Count | 3 |
Channel Type | N |
Country of Origin | Made in India |
FGH60N60 G60N100 FGA60N65 TO-247 And TO-264 Original
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
IRFP460 TO-247 MOSFET Transistor
Minimum Order Quantity: 100 Piece
Product Brochure
Channel Type | N Channel |
Brand | IOR |
Mounting Type | TO-247 |
Country of Origin | Made in India |
IRFP140 IRFP150 IRFP250 IRFP260 IRFP350 IRFP360 IRFP450 IRFP460 TO247
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
IRFPG50 Power MOSFET Module
Product Brochure
Voltage | 220V |
Part Number | IRFPG50 |
Channel Type | N |
Efficiency | 90% |
Drain-Source Voltage (Vdss) | 1000V |
Power Dissipation (PD) | 190W |
IRFPG40 IRFPG50 TO247
The IRFPG40 and IRFPG60 are high-voltage Power MOSFETs from International Rectifier (now Infineon Technologies). These transistors are not IGBTs but rather N-channel MOSFETs designed for high-voltage switching applications, including power supplies, motor control, and industrial electronics.
1. IRFPG40 MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 1000V
🔹 Continuous Drain Current (Id): 4.7A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 18.8A
🔹 RDS(on) (Drain-Source Resistance): 3.5Ω (Max)
🔹 Gate Threshold Voltage (Vgs, th): 2.0 - 4.0V
🔹 Power Dissipation (Pd): 190W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-247
Applications:
✔️ Switch Mode Power Supplies (SMPS)
✔️ High-Voltage Inverters
✔️ Industrial Motor Control
✔️ Induction Heating Systems
2. IRFPG60 MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 1200V
🔹 Continuous Drain Current (Id): 3.3A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 13.2A
🔹 RDS(on) (Drain-Source Resistance): 4.6Ω (Max)
🔹 Gate Threshold Voltage (Vgs, th): 2.0 - 4.0V
🔹 Power Dissipation (Pd): 125W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-247
Applications:
✔️ High-Voltage Power Converters
✔️ Industrial UPS Systems
✔️ HVAC Control Circuits
✔️ Battery Chargers & Power Inverters
2N6292
Channel Type | P Channel |
Brand | Fairchild ON Bell Etc |
Part Number | 2N6292 |
Country of Origin | Made in India |
2N6292 TO220 Original
The 2N6292 is a high-power NPN transistor designed for audio and general-purpose power amplifier applications. It is capable of handling high voltages and currents, making it suitable for use in power amplifiers, audio output stages, and other high-current applications. Here's a brief overview of its key specifications:
Type: NPN power transistor
Collector-Emitter Voltage (Vceo): 80V
Collector Current (Ic): 15A
Power Dissipation (Ptot): 150W
DC Current Gain (hFE): Typically 20-100 at 8A, Vce = 10V
Package Type: TO-3 metal can package
IRF640
Minimum Order Quantity: 100 Piece
Product Brochure
Channel Type | P Channel |
Brand | ST |
Part Number | IRF640N |
Mounting Type | TO-220 |
Country of Origin | Made in India |
IRF630N IRF640N To-220 ORIGINAL
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
24N60M2
Channel Type | N Channel |
Voltage | 4V |
Part Number | 24N60M2 |
Country of Origin | Made in India |
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
IRF3205
Product Brochure
Channel Type | P Channel |
Part Number | IRF3205 |
Mounting Type | TO-220 |
Country of Origin | Made in India |
IRF3205 TO-220 ORIGINALARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
9N90C
Product Brochure
Current | 1.5 A |
Part Number | 9N90C |
Channel Type | N Channel |
Package Type | TO-220 / TO-247 |
Features | High Voltage Capability |
Drain-Source Voltage (Vdss) | 900V |
9N90C MOSFET Transistor – Specifications & Features
The 9N90C is a high-voltage N-Channel MOSFET designed for switch-mode power supplies (SMPS), motor control, and industrial power applications. It offers low on-resistance (RDS(on)), high efficiency, and fast switching capabilities.
1. 9N90C MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 900V
🔹 Continuous Drain Current (Id): 9A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 36A
🔹 RDS(on) (Drain-Source Resistance): 1.2Ω (Max)
🔹 Gate Threshold Voltage (Vgs, th): 2.0 - 4.0V
🔹 Gate Charge (Qg): 85nC
🔹 Power Dissipation (Pd): 290W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-220 / TO-247
2. Features:
✅ High Voltage Capability (900V) – Suitable for high-power applications
✅ Low On-Resistance (RDS(on)) – Ensures efficient power conversion
✅ Fast Switching Speed – Reduces switching losses
✅ High Surge Current Capability – Protects against voltage spikes
✅ Rugged and Reliable Design – Ideal for industrial use
3. Applications:
✔️ Switch Mode Power Supplies (SMPS)
✔️ Industrial Inverters & Power Converters
✔️ HVAC & Motor Control Systems
✔️ Solar & UPS Power Management
✔️ High-Frequency Power Circuits.
2SK3599
Channel Type | P Channel |
Part Number | 2SK3599 |
Mounting Type | Throw Hole |
Country of Origin | Made in India |
2SK3599 TO220 ORIGINAL
The 2SK3599 is an N-channel MOSFET designed for high-power switching applications. It features a drain-to-source voltage (Vds) of 900V and a continuous drain current (Id) of 10A, making it suitable for switching power supplies, motor control, and high-voltage applications.
Features & Specifications:
✔ Drain-Source Voltage (Vds): 900V
✔ Continuous Drain Current (Id): 10A
✔ Low On-Resistance (Rds(on)): Improves efficiency and reduces heat generation
✔ High-Speed Switching Capability: Optimized for high-frequency operation
✔ Gate Threshold Voltage (Vgs): Typically 3V – 5V
✔ Package: TO-3P for effective thermal dissipation
Applications:
Switching Power Supplies (SMPS)
Motor Control Circuits
High-Voltage DC-DC Converters
Inverters & Industrial Power Systems
Renewable Energy & Power Management
5N60
Current | 15 A |
Part Number | 5N60 |
Mounting Type | TO-220 |
Pin Count | 3 |
Country of Origin | Made in India |
5N60 TO220
Although the “5N60” is sometimes mistakenly grouped with IGBTs, it is actually a high‐voltage, N‑channel power MOSFET. It is designed for high‐speed switching applications such as power supplies, PWM motor controls, DC‑DC converters, and bridge circuits. Key features include:
High Voltage & Current Capability: Rated for 600 V and a continuous drain current of about 4.5–5 A.
Low On‑State Resistance: R₍DS(on)₎ is typically ≤2.2 Ω at VGS = 10 V, which minimizes conduction losses.
Fast Switching Performance: Low gate charge (around 15 nC) and low reverse transfer capacitance (approximately 6.5 pF) enable quick switching.
Robust Avalanche Characteristics: Its rugged design helps protect against transient voltage spikes, ensuring reliable performance in demanding conditions.
Package Options: Commonly available in TO‑220 and related packages, offering good thermal dissipation for high‐power applications.
6N60C
Current | 15 A |
Packaging Size | TO220 |
Part Number | 6N60C |
Mounting Type | TO-220 |
Pin Count | 3 |
Country of Origin | Made in India |
6N60C 6N80 TO220 ORIGINAL
The 6N60C is an N-channel IGBT optimized for high-speed switching applications. It is widely used in power supplies, motor control, and inverter circuits due to its efficient energy management.
✔ Collector-Emitter Voltage (Vce): 600V
✔ Continuous Collector Current (Ic): 6A
✔ Low Saturation Voltage (Vce(sat)): Improves efficiency
✔ Fast Switching Speed: Ideal for high-frequency applications
✔ Package: TO-220 for compact and efficient thermal management
60N80 IGBT Transistor
The 60N80 is a high-power IGBT designed for industrial and power electronics applications. It provides high voltage tolerance and efficient switching, making it suitable for motor drives and power inverters.
✔ Collector-Emitter Voltage (Vce): 800V
✔ Continuous Collector Current (Ic): 60A
✔ Low Vce(sat): Reduces power dissipation
✔ High-Speed Switching Capability
✔ Package: TO-247 for better heat dissipation
Applications of 6N60C & 60N80 IGBTs:
Motor Drives & Industrial Automation
Switching Power Supplies (SMPS)
DC-AC Inverters for Renewable Energy Systems
Uninterruptible Power Supplies (UPS)
Electric Vehicle (EV) Power Management
7N65
Voltage | 4V |
Country of Origin | Made in India |
7N60 7N65 TO220
7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
9N90C
Channel Type | P Channel |
Mounting Type | TO-220 |
Part Number | 9N90C |
Country of Origin | Made in India |
9N90C TO247 And TO220
The 9N90C is an N-channel power MOSFET designed for high-voltage and high-current switching applications. It features a 900V drain-to-source voltage (Vds) and 9A continuous drain current (Id), making it suitable for power supplies, motor control, and industrial switching circuits.
Features & Specifications:
✔ Drain-Source Voltage (Vds): 900V
✔ Continuous Drain Current (Id): 9A
✔ Low Rds(on): Ensures efficient power handling
✔ Fast Switching Speed: Ideal for high-frequency applications
10N120BND
Current | 1.5 A |
Part Number | 10N120BND |
Package Type | TO247 |
Model Name/Number | 10N120BND |
Country of Origin | Made in India |
11N120BND
Current | 15 A |
Part Number | 11N120BND |
Channel Type | N |
Usage | Industrial Power Control |
Package Type | TO-247 |
Operating Temperature Range | -55 DegreeC to 150 DegreeC |
11N60C3 11N80C3 11N120BND TO-247 And TO-220 ORIGINAL
1. 11N60C3 MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 600V
🔹 Continuous Drain Current (Id): 11A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 44A
🔹 RDS(on) (Drain-Source Resistance): 0.33Ω (Max)
🔹 Gate Charge (Qg): 46nC
🔹 Power Dissipation (Pd): 179W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-220 / TO-247
Applications:
✔️ Switch Mode Power Supplies (SMPS)
✔️ LED Drivers & Power Converters
✔️ Industrial Power Systems
2. 11N80C3 MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 800V
🔹 Continuous Drain Current (Id): 11A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 44A
🔹 RDS(on) (Drain-Source Resistance): 0.68Ω (Max)
🔹 Gate Charge (Qg): 68nC
🔹 Power Dissipation (Pd): 214W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-220 / TO-247
Applications:
✔️ High-Voltage Switching Power Supplies
✔️ HVAC & Motor Control Systems
✔️ Solar Inverters & UPS Systems
3. 11N120BND MOSFET Specifications:
🔹 Type: N-Channel Power MOSFET
🔹 Drain-Source Voltage (Vdss): 1200V
🔹 Continuous Drain Current (Id): 11A @ 25°C
🔹 Pulsed Drain Current (Id, pulse): 44A
🔹 RDS(on) (Drain-Source Resistance): 1.4Ω (Max)
🔹 Gate Charge (Qg): 110nC
🔹 Power Dissipation (Pd): 312W
🔹 Operating Temperature Range: -55°C to 150°C
🔹 Package Type: TO-247
Applications:
✔️ High-Voltage Power Converters & Inverters
✔️ Industrial Power Control
✔️ HVAC Systems & Energy Applications
4. Key Differences – 11N60C3 vs. 11N80C3 vs. 11N120BNDFeature11N60C311N80C311N120BNDVdss (Drain-Source Voltage)600V800V1200VId (Continuous Drain Current @ 25°C)11A11A11ARDS(on) (Max)0.33Ω0.68Ω1.4ΩGate Charge (Qg)46nC68nC110nCPower Dissipation (Pd)179W214W312WPackageTO-220 / TO-247TO-220 / TO-247TO-247Application FocusSMPS, LED DriversHV Power Supplies, Solar InvertersIndustrial Inverters, High-Power Systems5. Advantages of 11N Series MOSFETs:
✅ High Voltage Handling (Up to 1200V)
✅ Low On-Resistance (Efficient Power Conversion)
✅ Fast Switching Speeds for High-Frequency Applications
✅ Enhanced Thermal Stability & Durability.
IRFB7545
Channel Type | P Channel |
Mounting Type | TO220 |
Part Number | IRFB7545 |
Country of Origin | Made in India |
IRFB7545 TO220
The IRFB7545 is an N-channel Power MOSFET designed for high-efficiency power switching applications. With a drain-to-source voltage (Vds) of 60V and a continuous drain current (Id) of 98A, it is ideal for high-current, low-voltage applications such as motor drives, power supplies, and DC-DC converters.
Features & Specifications:
✔ Drain-Source Voltage (Vds): 60V
✔ Continuous Drain Current (Id): 98A
✔ Low Rds(on): 4.5mΩ (reduces conduction losses and improves efficiency)
✔ Fast Switching Speed: Suitable for high-frequency applications
✔ High Current Handling: Optimized for power electronics and motor control
✔ Package: TO-220 for efficient heat dissipation
✔ Applications:
DC-DC converters
Power management systems
Motor control circuits
Battery-powered devices
IRFP250N
Channel Type | N Channel |
Transistor Type | NPN |
Brand | IOR |
Part Number | IRFP250N |
Mounting Type | TO-247 |
IRFP250N TO-247 Original
The IRFP250N is a high-performance N-channel Power MOSFET designed for switching applications, motor control, power supplies, and industrial electronics. It offers low Rds(on), high current capacity, and fast switching, making it ideal for high-efficiency power management.
Key Specifications:
✔ Drain-Source Voltage (Vds): 200V
✔ Continuous Drain Current (Id): 30A (at 25°C)
✔ On-Resistance (Rds(on)): 0.075Ω (max)
✔ Gate Threshold Voltage (Vgs): 2.0V – 4.0V
✔ Power Dissipation (Pd): 214W
✔ Package: TO-247 for excellent thermal management
Features:
✅ Low On-Resistance for reduced power loss
✅ High-Speed Switching for improved efficiency
✅ Robust and Reliable Design
✅ High Power Handling Capability
Applications:
Switching Power Supplies (SMPS)
DC-DC Converters & Inverters
Motor Control & Industrial Automation
Renewable Energy Systems (Solar Inverters, UPS)
Battery Management & High-Power Switching Circuits
30N60C
Channel Type | P Channel |
Mounting Type | TO-247 |
Part Number | 30N60C3 |
Country of Origin | Made in India |
30N60C TO247
The 30N60C is an N-channel power MOSFET designed for high-power switching applications, including power supplies, motor controllers, inverters, and industrial automation. It offers a 600V drain-to-source voltage (Vds) and 30A continuous drain current (Id), making it ideal for high-voltage, high-efficiency circuits.
Features & Specifications:
✔ Drain-Source Voltage (Vds): 600V
✔ Continuous Drain Current (Id): 30A
✔ Low Rds(on): Ensures minimal conduction loss
✔ High-Speed Switching: Optimized for efficiency
✔ Package Options: TO-247, TO-220 for superior heat dissipation
✔ Applications:
Switched-Mode Power Supplies (SMPS)
Motor drives and industrial control
High-voltage DC-DC converters
17N80C
Channel Type | P Channel |
Brand | Infineon |
Mounting Type | TO-247 |
Part Number | 17N80C3 |
Country of Origin | Made in India |
17N80C3 TO-247
The 17N80C is an N-channel power MOSFET designed for high-voltage and high-current switching applications. With an 800V drain-to-source voltage (Vds) and 17A continuous drain current (Id), it is ideal for power supplies, motor controls, and industrial applications.
Features & Specifications:
✔ Drain-Source Voltage (Vds): 800V
✔ Continuous Drain Current (Id): 17A
✔ Low Rds(on): Ensures high efficiency and minimal conduction loss
✔ Fast Switching Speed: Suitable for high-frequency applications
✔ Package Options: TO-220, TO-247 for efficient heat dissipation
✔ Applications:
Switched-Mode Power Supplies (SMPS)
Industrial motor drives
Power factor correction (PFC) circuits
High-voltage DC-DC converters
IRFP9240
Channel Type | P Channel |
Part Number | IRFP9240 |
Mounting Type | TO-247 |
IRFP9240 TO-247
The IRFP9240 is a P-channel power MOSFET designed for high-power switching and amplification applications. It has a drain-to-source voltage (Vds) of -200V and a continuous drain current (Id) of -12A, making it ideal for audio amplifiers, power management circuits, and switching power supplies.
Features & Specifications:
✔ Drain-Source Voltage (Vds): -200V
✔ Continuous Drain Current (Id): -12A
✔ Low Rds(on): 0.5Ω for efficient power handling
✔ High-Speed Switching: Suitable for high-frequency applications
✔ Package: TO-247 for effective thermal dissipation
✔ Enhanced Avalanche Energy Capability for durability in harsh conditions
Applications:
High-Power Audio Amplifiers
Switching Power Supplies (SMPS)
DC-DC Converters
Motor Control Circuits
Renewable Energy Systems
IRF540N
Channel Type | P Channel |
Part Number | IRF540N |
Mounting Type | TO-220 |
Country of Origin | Made in India |
IRF540N TO-220 Original
The IRF540N is an N-channel power MOSFET widely used in power switching and motor control applications. With a drain-to-source voltage (Vds) of 100V and a continuous drain current (Id) of 33A, it is ideal for high-efficiency power management circuits.
Features & Specifications:
✔ Drain-Source Voltage (Vds): 100V
✔ Continuous Drain Current (Id): 33A
✔ Low Rds(on): 44mΩ (reduces conduction losses)
✔ Fast Switching Speed: Suitable for high-frequency applications
✔ Gate Threshold Voltage (Vgs): 2V – 4V
✔ Package: TO-220 for efficient heat dissipation
✔ High Power Dissipation Capability
Applications:
DC-DC Converters
Motor Controllers & Drivers
Switched-Mode Power Supplies (SMPS)
Solar Inverters & Battery Management Systems
Arduino & Microcontroller-Based Switching Circuits
23N50
Channel Type | P Channel |
Part Number | 23N50 |
Mounting Type | TO-247 |
Country of Origin | Made in India |
23N50E TO-247 ORIGINAL
The 23N50E is an N-channel power MOSFET designed for high-voltage switching applications. With a drain-to-source voltage (Vds) of 500V and a continuous drain current (Id) of 23A, it is widely used in power supplies, motor control, and inverter circuits.
Features & Specifications:
✔ Drain-Source Voltage (Vds): 500V
✔ Continuous Drain Current (Id): 23A
✔ Low Rds(on): Reduces conduction losses for higher efficiency
✔ Fast Switching Speed: Ideal for high-frequency applications
✔ High Voltage and Current Handling Capability
✔ Package: TO-247 for efficient thermal dissipation
Applications:
Switching Power Supplies (SMPS)
DC-DC Converters & Inverters
Motor Control & Industrial Automation
Solar Power Systems & UPS
High-Power LED Drivers
IRF9640
Channel Type | P Channel |
Brand | IOR |
Part Number | IRF9640 |
Mounting Type | TO-220 |
Country of Origin | Made in India |
IRF9630 IRF9640 TO-220
The IRF9630 and IRF9640 are P-channel power MOSFETs designed for high-power switching and amplification applications. They are commonly used in power management circuits, motor control, and audio amplifier circuits due to their efficient performance and robust design.
IRF9630 MOSFET Specifications:
✔ Drain-Source Voltage (Vds): -200V
✔ Continuous Drain Current (Id): -6.5A
✔ On-Resistance (Rds(on)): 0.8Ω
✔ Fast Switching Speed: Ideal for high-frequency applications
✔ Package: TO-220
IRF9640 MOSFET Specifications:
✔ Drain-Source Voltage (Vds): -200V
✔ Continuous Drain Current (Id): -11A
✔ On-Resistance (Rds(on)): 0.5Ω
✔ Fast Switching for High-Efficiency Applications
✔ Package: TO-220
Applications:
Switched-Mode Power Supplies (SMPS)
DC-DC Converters
High-Power Audio Amplifiers
Motor Control Circuits
Battery Management & Solar Power Systems
IRFP260N
Channel Type | N Channel |
Transistor Type | NPN |
Brand | IOR |
Part Number | IRFP260N |
Mounting Type | TO-247 |
IRFP260N TO-247 Original
The IRFP260N is a high-power N-channel MOSFET designed for switching applications, power supplies, and motor control. It features low Rds(on), high current capacity, and fast switching performance, making it ideal for high-efficiency power conversion applications.
Key Specifications:
✔ Drain-Source Voltage (Vds): 200V
✔ Continuous Drain Current (Id): 50A (at 25°C)
✔ On-Resistance (Rds(on)): 0.04Ω (max)
✔ Gate Threshold Voltage (Vgs): 2.0V – 4.0V
✔ Power Dissipation (Pd): 300W
✔ Package: TO-247 for excellent heat dissipation
Features:
✅ Low On-Resistance for minimal power loss
✅ Fast Switching Speed for high-frequency applications
✅ High Power Handling Capability
✅ Rugged and Reliable Design
Applications:
Switching Power Supplies (SMPS)
DC-DC Converters & Inverters
Motor Control & Industrial Automation
Solar Inverters & Uninterruptible Power Supplies (UPS)
Battery Management & High-Power Switching Circuits
IRFP450
Channel Type | N Channel |
Transistor Type | NPN |
Brand | Vishay |
Part Number | IRFP450 |
Mounting Type | TO-247 |
IRFP450 TO-247 Original
The IRFP450 is an N-channel Power MOSFET designed for high-power switching applications, including switching power supplies, motor control, and inverters. It features low Rds(on), high-speed switching, and robust thermal performance.
Key Specifications:
✔ Drain-Source Voltage (Vds): 500V
✔ Continuous Drain Current (Id): 14A (at 25°C)
✔ On-Resistance (Rds(on)): 0.4Ω (max)
✔ Gate Threshold Voltage (Vgs): 2.0V – 4.0V
✔ Power Dissipation (Pd): 190W
✔ Package: TO-247 for excellent thermal management
Features:
✅ High voltage and current handling
✅ Low conduction and switching losses
✅ Fast switching speed for high-frequency applications
✅ Rugged and reliable design
Applications:
Switching Power Supplies (SMPS)
DC-DC Converters & Inverters
Motor Control & Industrial Automation
Solar Power Systems & UPS
High-Voltage Pulse Circuits.
H15R1203
Current | 15 A |
Brand | Intel |
Part Number | H15R1203 |
Mounting Type | TO247 |
Pin Count | 3 |
H15R1203 IGBT Transistor
The H15R1203 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It offers low conduction losses, high efficiency, and fast switching speeds, making it ideal for industrial and energy-efficient applications.
Key Specifications:
✔ Collector-Emitter Voltage (Vce): 1200V
✔ Continuous Collector Current (Ic): 15A
✔ Saturation Voltage (Vce(sat)): Low for improved efficiency
✔ Switching Speed: Optimized for high-frequency applications
✔ Package: Standard TO-247 for efficient heat dissipation
Features:
✅ Low Switching Losses for improved energy efficiency
✅ High Voltage & Current Handling for industrial use
✅ Robust and Reliable Design
✅ Fast Turn-On & Turn-Off Speeds
Applications:
Motor Drives & Industrial Automation
Power Inverters & UPS Systems
Renewable Energy Systems (Solar & Wind Inverters)
HVAC & Electric Vehicle (EV) Power Systems
High-Frequency Switching Applications
110N8F6
Channel Type | P Channel |
Country of Origin | Made in India |
110N8F6 TO-220
The 110N8F6 is an N-channel power MOSFET designed for high-efficiency power switching applications. With a drain-to-source voltage (Vds) of 80V and a continuous drain current (Id) of 110A, it is ideal for power management, motor control, and DC-DC conversion in industrial and automotive applications.
Features & Specifications:โ Drain-Source Voltage (Vds): 80V
โ Continuous Drain Current (Id): 110A
โ Low Rds(on): Ensures minimal power loss and high efficiency
โ Fast Switching Speed: Suitable for high-frequency applications
โ Package: TO-220, D2PAK, or similar for better thermal management
โ Applications:
- DC-DC converters
- Motor controllers
- Battery management systems (BMS)
- Power supply circuits
24N60M2
Channel Type | N Channel |
Voltage | 600V |
Country of Origin | Made in India |
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
24N60
Channel Type | N Channel |
Part Number | 24N60 |
Maximum Operating Temperature | 150 Degree C |
Pin Count | 3 |
Usage | Electronic Use |
Color | Black |
FQA24N60 TO-24724N60M2 TO-247 Original
The 24N60 is a designation used by various manufacturers for N-channel enhancement-mode power MOSFETs designed to handle high voltages and currents. While specific parameters can vary between manufacturers, these transistors typically share common characteristics suitable for high-power applications.
General Features:
Drain-Source Voltage (V_DS): 600 V
Continuous Drain Current (I_D): Approximately 17 to 24 A, depending on the specific model and manufacturer
On-Resistance (R_DS(on)): Typically ranges from 0.16 Ω to 0.175 Ω
Gate Charge (Q_g): Designed for low gate charge to facilitate efficient switching
Package Types: Commonly available in TO-220, TO-220FP, TO-247, and D2PAK packages
FDA59N30
Channel Type | N Channel |
Voltage | 600V |
Mounting Type | TO-247 |
Brand | ON |
Part Number | FDA59N30 |
FDA59N30 TO-247
The FDA59N30 is an N-Channel MOSFET designed for high-power switching applications, including power supplies, motor control, and high-efficiency converters.
Key Specifications:
Type: N-Channel MOSFET
Drain-Source Voltage (Vds): 300V
Continuous Drain Current (Id): 59A (at 25°C)
Pulsed Drain Current (Idp): 236A
Gate-Source Voltage (Vgs): ±20V
Drain-Source On-Resistance (Rds(on)): 0.028Ω (typical at Vgs = 10V, Id = 29.5A)
Total Power Dissipation (Ptot): 300W
Threshold Voltage (Vgs(th)): 2V - 4V
Package Type: TO-3P
Applications:
✔ High-efficiency switching power supplies
✔ Motor control and industrial drives
✔ DC-DC converters
✔ Inverter circuits.
FQA28N50
Voltage | 600V |
Channel Type | N Channel |
Country of Origin | Made in India |
FQA28N50 TO-247 Original
The FQA28N50 is an N-Channel MOSFET designed for high-power switching applications, such as power supplies, motor drives, and industrial inverters. It offers high voltage and current handling capabilities with efficient performance.
Key Specifications:
Type: N-Channel MOSFET
Drain-Source Voltage (Vds): 500V
Continuous Drain Current (Id): 28A (at 25°C)
Pulsed Drain Current (Idp): 112A
Gate-Source Voltage (Vgs): ±30V
Drain-Source On-Resistance (Rds(on)): 0.095Ω (typical at Vgs = 10V, Id = 14A)
Total Power Dissipation (Ptot): 300W
Threshold Voltage (Vgs(th)): 2.0V - 4.0V
Package Type: TO-3P
Applications:
✔ High-power switching power supplies
✔ Motor control and industrial drives
✔ DC-DC and AC-DC converters
✔ Inverter circuits.
P75NF75
Channel Type | P Channel |
Voltage | 4V |
Brand | ST |
Part Number | P75NF75 |
Country of Origin | Made in India |
P75NF75 TO-220 Original St
The P75NF75 is an N-Channel MOSFET designed for high-power switching applications, commonly used in automotive electronics, power management, and motor control.
Key Specifications:
Type: N-Channel MOSFET
Drain-Source Voltage (Vds): 75V
Continuous Drain Current (Id): 80A (at 25°C)
Pulsed Drain Current (Idp): 300A
Gate-Source Voltage (Vgs): ±20V
Drain-Source On-Resistance (Rds(on)): 0.009Ω (typical at Vgs = 10V, Id = 37A)
Total Power Dissipation (Ptot): 110W
Threshold Voltage (Vgs(th)): 2V - 4V
Package Type: TO-220
Applications:
✔ Automotive power switching
✔ Motor control and industrial drives
✔ DC-DC converters
✔ Battery management systems
50JR22
Current | 15 A |
Brand | Toshibha |
Part Number | 50JR22 |
Pin Count | 3 |
Collector-Emitter Voltage | 600V |
Power Dissipation | 230 W |
50JR22 TO-247 Original Toshiba
The GT50JR22 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Toshiba. It is designed for high-power switching applications, particularly in soft switching scenarios.
Key Features:
Collector-Emitter Voltage (V<sub>CE</sub>): 600 V
Continuous Collector Current (I<sub>C</sub>): 50 A
Saturation Voltage (V<sub>CE(sat)</sub>): 1.55 V
Power Dissipation: 230 W
Package: TO-3P(N) with 3 pins
P80NF55
Voltage | 4V |
Brand | ST |
Part Number | P80NF55 |
Country of Origin | Made in India |
P80NF55 P80NF70 TO220
These are N-channel Power MOSFETs designed for high-current and low-voltage applications such as power management, motor control, and switching regulators.
1. P80NF55 MOSFET
Drain-Source Voltage (V_DSS): 55V
Continuous Drain Current (I_D): 80A
Pulsed Drain Current (I_DM): 320A
Gate-Source Voltage (V_GS): ±20V
Drain-Source Resistance (R_DS(on)): 0.009Ω (max)
Power Dissipation (P_D): 110W
Package Type: TO-220 / D²PAK
Features:
Low on-resistance for high efficiency
High-speed switching
Avalanche-rated
Suitable for automotive and industrial applications
2. P80NF70 MOSFET
Drain-Source Voltage (V_DSS): 70V
Continuous Drain Current (I_D): 80A
Pulsed Drain Current (I_DM): 320A
Gate-Source Voltage (V_GS): ±20V
Drain-Source Resistance (R_DS(on)): 0.007Ω (max)
Power Dissipation (P_D): 120W
Package Type: TO-220 / D²PAK
Features:
Very low R_DS(on) for high efficiency
High-current capability
Ideal for high-power applications such as DC-DC converters, motor drivers, and inverters.
IRFP150N
Channel Type | N Channel |
Transistor Type | NPN |
Brand | IOR |
Part Number | IRFP150N |
Mounting Type | TO-247 |
IRFP150 TO-247 Original
The IRFP150N is an N-channel MOSFET designed for high-power switching applications. Here are its key specifications and features:
Key Specifications:
Drain-Source Voltage (V_DSS): 100V
Continuous Drain Current (I_D): 42A
Pulsed Drain Current (I_DM): 170A
Gate-Source Voltage (V_GS): ±20V
Drain-Source Resistance (R_DS(on)): 0.042Ω (max)
Total Gate Charge (Q_G): 100nC
Power Dissipation (P_D): 160W
Package Type: TO-247
Features:
Low on-resistance for improved efficiency
Fast switching speed
High current-handling capability
Suitable for power supplies, motor controls, and other high-power applications
Fully avalanche-rated.
W12NK90Z
Channel Type | P Channel |
Brand | ST |
Part Number | W12NK90Z |
The W12NK90Z is an N-Channel MOSFET designed for high-voltage switching applications, including power supplies, lighting circuits, and motor control.
Key Specifications:- Type: N-Channel MOSFET
- Drain-Source Voltage (Vds): 900V
- Continuous Drain Current (Id): 12A (at 25°C)
- Pulsed Drain Current (Idp): 48A
- Gate-Source Voltage (Vgs): ±30V
- Drain-Source On-Resistance (Rds(on)): 0.85Ω (typical at Vgs = 10V, Id = 6A)
- Total Power Dissipation (Ptot): 280W
- Threshold Voltage (Vgs(th)): 3V - 5V
- Package Type: TO-247
- Applications:
โ Switch-mode power supplies (SMPS)
โ Industrial power control
โ LED drivers
โ High-voltage converters
FDA59N30
Voltage | 4V |
Country of Origin | Made in India |
G4PC50U
Channel Type | P Channel |
Country of Origin | Made in India |
IRF2807
Channel Type | P Channel |
Part Number | IRF2807 |
Mounting Type | TO-220 |
Country of Origin | Made in India |
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