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IGBT TRANSISTORS
IRFP22N60K
Voltage | 600V |
Mounting Type | Throw Hole |
Brand | Original |
Part Number | IRFP22N60K |
Current | 22Amp. |
Pin Count | 3 |
The IRFP22N60K is an N-channel Power MOSFET from Infineon Technologies, designed for high-voltage and high-efficiency applications. It features a 600V drain-to-source voltage (V_DS), 22A continuous drain current (I_D), and low R_DS(on) of 0.18Ω, ensuring minimal conduction losses. This MOSFET is housed in a TO-247 package, allowing efficient heat dissipation. It is optimized for switch-mode power supplies (SMPS), motor drives, inverters, and industrial power applications. Key benefits include fast switching speed, low gate charge, and rugged avalanche performance, making it ideal for high-frequency power conversion and energy-efficient designs.
G4PC40U
Current | 40 A |
Part Number | G4PC40U |
Switching Frequency | High-speed operation |
Turn-Off Time (Toff) | 80ns |
Operating Temperature Range | -55 DegreeC to +150 DegreeC |
Package Type | TO-247 |
G4PC40U TO-247 Original
The G4PC40UD is a high-speed Insulated Gate Bipolar Transistor (IGBT) designed for switch-mode power supplies (SMPS), motor control, inverters, and high-frequency applications. It offers low saturation voltage and fast switching performance, making it suitable for high-efficiency power conversion systems.
1. General Specifications:
🔹 Collector-Emitter Voltage (Vce): 600V
🔹 Continuous Collector Current (Ic): 40A
🔹 Pulsed Collector Current (Icm): 80A
🔹 Gate-Emitter Voltage (Vge): ±20V
🔹 Collector-Emitter Saturation Voltage (Vce(sat)): 2.2V @ 40A
🔹 Switching Frequency: High-speed switching
🔹 Total Power Dissipation (Pd): 150W
🔹 Turn-On Time (Ton): 40ns
🔹 Turn-Off Time (Toff): 80ns
🔹 Operating Temperature Range: -55°C to +150°C
🔹 Package Type: TO-247
2. Key Features:
✅ High-Speed Switching – Suitable for high-frequency power applications
✅ Low Collector-Emitter Saturation Voltage (Vce(sat)) – Reduces conduction losses
✅ High-Current Capability (40A Continuous, 80A Pulsed)
✅ Robust & Durable Design – Reliable for industrial applications
✅ TO-247 Package – Ensures better heat dissipation
3. Applications:
✔️ Switch Mode Power Supplies (SMPS)
✔️ Motor Control & Drives
✔️ UPS (Uninterruptible Power Supplies)
✔️ High-Frequency Inverters
✔️ Welding Machines
✔️ Power Converters & Amplifiers
4. Equivalent & Alternative IGBTs:
🔹 G4PC50UD – 600V, 50A IGBT
🔹 IRG4PC40U – Similar 600V, 40A IGBT
🔹 HGTG40N60B3 – 600V, 40A, alternative IGBT.
33N60DM2
Channel Type | P Channel |
Country of Origin | Made in India |
70N60DM2
Product Brochure
Part Number | 70N60M2 |
Packaging Type | TO-247 |
Mounting Type | TO-247 |
Pin Count | 3 |
Brand | ST |
STW70N60M2 TO-247 ORIGINAL
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K50H603
Product Brochure
Part Number | K50H603 |
Mounting Type | TO-247 |
Current | 50A |
Voltage | 650V |
ARD Electronics - Wholesaler of IGBT Modules,ATMEL Microcontroller, Integrated Circuits & IPM Modules in Delhi.
041N60F
Current | 1.5 A |
Country of Origin | Made in India |
19N60
Channel Type | P Channel |
Mounting Type | TO220 |
Country of Origin | Made in India |
19N60 TO220
The 19N60 is an N-channel power MOSFET designed for high-voltage and high-efficiency switching applications. With a drain-to-source voltage (Vds) of 600V and a continuous drain current (Id) of 19A, it is ideal for power conversion, motor control, and industrial applications.
Features & Specifications:
✔ Drain-Source Voltage (Vds): 600V
✔ Continuous Drain Current (Id): 19A
✔ Low Rds(on): Reduces conduction losses, improving efficiency
✔ Fast Switching Speed: Optimized for high-frequency applications
✔ High Avalanche Energy Capability for rugged performance
✔ Package: Typically available in TO-220, TO-247, or D2PAK
✔ Applications:
Switched-Mode Power Supplies (SMPS)
Motor controllers and inverters
Power factor correction (PFC) circuits
High-voltage DC-DC converters
FQA38N30
Channel Type | P Channel |
Country of Origin | Made in India |
FQA38N30 TO247
The FQA38N30 is an N-channel enhancement mode power MOSFET designed for high-voltage applications. Manufactured using ON Semiconductor's proprietary planar stripe DMOS technology, it offers low on-state resistance and superior switching performance.
Key Specifications:
Drain-Source Voltage (V<sub>DS</sub>): 300 V
Continuous Drain Current (I<sub>D</sub>): 38.4 A
On-State Resistance (R<sub>DS(on)</sub>): 85 mΩ (maximum) at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 19.2 A
Total Gate Charge (Q<sub>g</sub>): 90 nC (typical)
Power Dissipation (P<sub>D</sub>): 290 W
Gate-Source Voltage (V<sub>GS</sub>) Range: ±30 V
Package: TO-3P
These features make the FQA38N30 suitable for high-power switching applications, including power supplies, motor drives, and industrial equipment
IXFB100N50P
Channel Type | N Channel |
Brand | IXYS |
Mounting Type | TO-264 |
Part Number | IXFB100N50P |
Country of Origin | Made in India |
IXFB100N50P TO264
The IXFB100N50P is a high-power N-channel MOSFET designed for efficient switching in industrial and power applications. It features a 500V drain-to-source voltage (Vds) and 100A continuous drain current (Id), making it suitable for power supplies, motor control, inverters, and high-frequency switching applications. With a low on-resistance (Rds(on)), it minimizes power dissipation, improving efficiency. The device utilizes trench and planar technology, ensuring fast switching speeds and high reliability. Packaged in a TO-264 case, it provides excellent heat dissipation for demanding environments. The IXFB100N50P is widely used in renewable energy systems, industrial automation, and power conversion circuits.
RJQ6008
Product Brochure
Current | 1.5 A |
Country of Origin | Made in India |
600V - 10A - IGBT and Diode High Speed Power Switching DETAIL DESCRIPTIONRJQ6008DPM Datasheet 600V - 10A .
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FGA60N65
Brand | Fairchild |
Part Number | FGA60N65 |
Mounting Type | TO-247 |
Pin Count | 3 |
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FGH40N60
Brand | Fairchild |
Part Number | FGH40N60 |
Mounting Type | TO-247 |
Pin Count | 3 |
FGH40N60 FGH40T65 40T60 TO247 ORIGINAL
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40TPS12A
Number of Pins | 3 |
Output Voltage | 12V |
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